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World's first graphene RF field effect transistors (FETs) demonstrated.

HRL Laboratories; LLC, announced it has demonstrated what it claims are the world's first graphene RF field effect transistors (FETs) as part of the Carbon Electronics for RF Applications, or CERA program. The milestone is the first in the proposed 51-month, three-phase program to develop a new generation of carbon-based RF integrated circuits for ultra-high-speed, ultra-low-power applications.

The goal of the effort, sponsored by the Defense Advanced Research Projects Agency (DARPA) and under the management of the Space and Naval Warfare Systems Center (SPAWAR), is to exploit the unique qualities of graphene carbon to create components that will enable unprecedented capabilities in high-bandwidth communications, imaging, and radar systems. HRL is collaborating with a group of universities, commercial companies and the Naval Research Laboratory (NRL).


While graphene FETs have been demonstrated before, most used exfoliated graphene films. "HRL, working with the NRL, demonstrated graphene FETs using epitaxial film operating in the RF frequency range," said Jeong-sun Moon, Senior Research Scientist with the Microelectronics Laboratory at HRL. "This is a key step toward wafer-scale high-speed graphene RF FETs that operate in the RF domain."

A graphene-on-Silicon platform could revolutionize a number of military applications because of its high performance, scalability, integration, and low cost. Graphene is a single layer of carbon atoms densely packed in a honeycomb crystalline lattice configuration. The advantages of this configuration are its high current-carrying capacity, excellent thermal conductivity, and low-voltage operational potential.

Compiled by the ECN Staff

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Title Annotation:Research EDGE
Publication:ECN-Electronic Component News
Date:Jan 1, 2009
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