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Vishay TrenchFET(R) Power MOSFETs for OR-ing Applications Feature Industry-Best On-Resistance Down to 1.6 Milliohms in SO-8 Footprint Area With 20-V Drain-to-Source and Gate-to-Source Ratings.

MALVERN, Pa. -- Vishay Intertechnology, Inc. (NYSE: VSH) is helping to improve the efficiency of fixed telecom networks with three power MOSFETs for OR-ing applications that offer best-in-class on-resistance performance with a choice of three package options.

In enterprise server networks, the OR-ing function switches on the redundant power supply when the main supply fails to ensure continuous power to the system. Because the MOSFETs carry the entire load from the functioning power supply, reducing the power losses in these devices can significantly lower energy costs.

The three n-channel MOSFETs released today feature 20-V drain-to-source and gate-to-source voltage ratings and offer on-resistance specifications as low as 1.6 milliohms in the SO-8 footprint area. Compared with competing devices, on-resistance performance for these Vishay Siliconix power MOSFETs is up to 36% lower than the next best devices on the market with the same voltage specifications and package types.

Designers will choose among the three TrenchFET([R]) Gen II devices being announced today depending upon the specific circuit and thermal requirements of their applications.

With 36% lower on-resistance than any similar power MOSFET in the standard SO-8 package, the new Si4398DY delivers an rDS(on) rating of 2.8 milliohms at 10 V. In addition to OR-ing applications, the Si4398DY can be used for low-power synchronous rectification, dc-to-dc, and point-of-load power conversion circuitry.

For low-voltage power supplies, the Si4398DY offers the best rDS(on) ratings available in the SO-8 package. As power increases, power MOSFETs in thermally enhanced packages can conduct more current in the same footprint, reducing the number of devices needed for the application. This allows the power density to be increased with a 12-V rail voltage topology in ac or dc switchmode power supplies requiring redundant circuitry.

For optimal heat dissipation in still-air environments, Vishay is releasing the Si7866ADP in the thermally enhanced PowerPAK([R]) SO-8 package. With a maximum on-resistance rating of 2.4 milliohms at 10 V, the Si7866ADP combines low conduction losses with robust thermal performance. Maximum junction-to-case thermal resistance is a typical 1.5 degrees Celsius per Watt, compared to the 16 degrees Celsius per Watt for junction-to-foot thermal resistance offered by the standard SO-8. In addition to OR-ing, its target applications include synchronous buck converters in desktop computers and low-output-voltage synchronous rectification.

For implementations with forced-air cooling, the previously released SiE808DF in the PolarPAK([R]) package, with dual heat dissipation paths on the top and bottom of the device, offers 20% lower on-resistance than the next best device with double-sided cooling. Its extraordinarily low maximum rDS(on) rating is 1.6 milliohms at 10 V.

Links to product datasheets: (Si4398DY) (Si7866ADP) (SiE808DF)

Samples and production quantities of the Si4398DY, Si7866ADP, and SiE808DF are available now, with lead times of 12 to 14 weeks for larger orders.

Vishay Intertechnology, Inc., a Fortune 1,000 Company listed on the NYSE (VSH), is one of the world's largest manufacturers of discrete semiconductors (diodes, rectifiers, transistors, and optoelectronics and selected ICs) and passive electronic components (resistors, capacitors, inductors, sensors, and transducers). These components are used in virtually all types of electronic devices and equipment, in the industrial, computing, automotive, consumer, telecommunications, military, aerospace, and medical markets. Its product innovations, successful acquisition strategy, and ability to provide "one-stop shop" service have made Vishay a global industry leader. Vishay can be found on the Internet at

TrenchFET, PowerPAK, and PolarPAK are registered trademarks of Siliconix incorporated.
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Publication:Business Wire
Date:Nov 7, 2007
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