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United States : Samsung Electronics Takes 3D Memory to New Heights with Sixth-generation V-NAND SSDs for Client Computing.

Samsung Electronics Co., Ltd., the world leader in advanced memory technology, announced that it has begun mass producing 250-gigabyte (GB) SATA solid state drive (SSD) that integrates the companys sixth-generation (1xx-layer) 256-gigabit (Gb) three-bit V-NAND for global PC OEMs. By launching a new generation of V-NAND in just 13 months, Samsung has reduced the mass production cycle by four months while securing the industrys highest performance, power efficiency and manufacturing productivity.

The only single-stack 3D memory die with a 100+ layer design

Samsungs sixth-generation V-NAND features the industrys fastest data transfer rate, capitalizing on the companys distinct manufacturing edge that is taking 3D memory to new heights.

Utilizing Samsungs unique channel hole etching technology, the new V-NAND adds around 40-percent more cells to the previous 9x-layer single-stack structure. This is achieved by building an electrically conductive mold stack comprised of 136 layers, then vertically piercing cylindrical holes from top to bottom, creating uniform 3D charge trap flash (CTF) cells.

As the mold stack in each cell area increases in height, NAND flash chips tend to become more vulnerable to errors and read latencies. To overcome such limitations, Samsung has incorporated a speed-optimized circuit design that allows it to achieve the fastest data transfer speed, at below 450 microseconds (?s) for write operations and below 45?s for reads. Compared to the previous generation, this represents a more than 10-percent improvement in performance, while power consumption is reduced by more than 15 percent.

Thanks to this speed-optimized design, Samsung will be able to offer next-generation V-NAND solutions with over 300 layers simply by mounting three of the current stacks, without compromising chip performance or reliability.

In addition, the number of channel holes required to create a 256Gb chip density has decreased to 670 million holes from over 930 million with the previous generation, enabling reduced chip sizes and less process steps. This brings a more than 20-percent improvement in manufacturing productivity.

Leveraging the high-speed and low-power features, Samsung plans to not only broaden the reach of its 3D V-NAND into areas like next-generation mobile devices and enterprise servers, but also into the automotive market where high reliability is extremely critical.

Following todays introduction of the 250GB SSD, Samsung plans to offer 512Gb three-bit V-NAND SSD and eUFS in the second half of this year. The company also expects to expand production of higher-speed and greater-capacity sixth-generation V-NAND solutions at its Pyeongtaek (Korea) campus starting next year to better meet demand from global customers.

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Publication:Mena Report
Date:Aug 7, 2019
Words:425
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