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United States : INTEL delegated a Patent for Strain Inducing Semiconductor areas.

Intel, California based, has been allotted a patent (8,530,884), which is formulated by Suman Datta, Beaverton, Ore., Jack T. Kavalieros, Portland, Ore., and Been-Yih Jin, Lake Oswego, Ore., for "strain inducing semiconductor regions."

"A method to form a strain-inducing semiconductor region is described. In one embodiment, formation of a strain-inducing semiconductor region laterally adjacent to a crystalline substrate results in a uniaxial strain imparted to the crystalline substrate, providing a strained crystalline substrate. In another embodiment, a semiconductor region with a crystalline lattice of one or more species of charge-neutral lattice-forming atoms imparts a strain to a crystalline substrate, wherein the lattice constant of the semiconductor region is different from that of the crystalline substrate, and wherein all species of charge-neutral lattice-forming atoms of the semiconductor region are contained in the crystalline substrate." abstract of the patent published stated by by the U.S. Patent and Trademark Office.

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Publication:Mena Report
Date:Sep 16, 2013
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