Transistors sprout inner forests.
At Lund University in Sweden, Lars-Erik Wernersson and his colleagues have made transistors in which a solid layer of material is replaced by an airy forest of nanowires (SN: 5/22/04, p. 325). Sheathing the lower third of each nanowire with a control electrode yielded transistors that waste less power than conventional designs do, says Lund team leader Lars Samuelson.
The nanowire forests can be made of high-performance semiconductors, such as indium arsenide. Incorporating that material boosts transistor speeds above what's possible with ordinary semiconductors such as silicon.
Advances in methods for growing nanowires promise to make the transistors easy to manufacture, Samuelson adds.
Wernersson described the new nanowire transistors last month at the IEEE International Electron Devices Meeting in Washington, D.C.
At that same meeting, researchers from Samsung Electronics in Yongin City, Korea, unveiled a prototype transistor based on just two silicon nanowires. The engineers claim that the new transistor is "highly manufacturable." --P.W.
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|Article Type:||Brief Article|
|Date:||Jan 14, 2006|
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