Transistors and solid state switches.
The solid state relays provide low off-state capacitance of <15 pF for good signal isolation and low on-resistance for less insertion loss. Low off-state leakage of <10 nA reduces system measurement errors. The company's expanded ASSR Series feature qualified performance across a wide temperature range of -40[degrees]C to 85[degrees]C, with high transient immunity >1 kV/[micro]s and what is said to be an industry high of 3.75 kV in insulation protection in a miniature SO4 package. The ASSR-301C and ASSR-401C are single channel, 1 Form A relays that come in an S04 package; the ASSR-302C and ASSR-402C are dual channel, 2 Form A relays that come in a standard DIP8 footprint
The ASSR-301C is priced at $1.97 each, and ASSR-302C is $3.60 each in 1,000-piece quantities. The ASSR-401C is priced at $1.97 each, and ASSR-402C is $3.60 each in 1,000-piece quantities.
Omron Electronic Components' G3VM-21LR and 41LR Series SSOP MOSFET relays measure 1.8 mm (H) x 2 mm (W) x 3.8 mm (L) and are said to offer designers a board space savings of 67 percent when compared to a standard SOP package. Their solid-state, high reliability construction provides hundreds of millions of operations with low power consumption. The MOSFET chip is available in a 1-Form-A contact configuration, provides fast turn-On and turn-Off times in the microsecond range, and it is capable of handling both AC and DC loads.
On-resistance as low as 1[ohm] and Off-state capacitance beginning as low as 1 pF ensures accuracy. This series also offers what is said to be the lowest available range of C x R values in the industry, starting at 2.5 pF*[ohm]. These features make these MOSFET relays appropriate for medical imaging applications such as CT, MRI and ultrasound equipment. In quantities of 10,000 pieces, the cost ranges from $6.79 to $7.10, depending on the model.
Companies Mentioned in Product Technology Review
* Avago Technologies
* Omron Electronic Components
* ON Semiconductor
* Fairchild Semiconductor
* Vishay Intertechnology
Product: ASSR-301C/ASSR-302C Solid State Relays
* 250V output withstand voltage
* 0.05A current rating
* Low input current: [I.sub.F] = 1 mA
* Low C x R: 340 pF*[ohm] typical
* Low output Off-state leakage current: 0.3 nA typical
* Fast speed switching: 0.07 ms ([T.sub.on]), 0.07 ms ([T.sub.off])
* High transient immunity: >1 kV/[micro]s
Omron Electronic Components
Product: G3VM-21LR Solid State Relays
* Output capacitance of 1 pF (typical) allows high frequency applications
* C x R values starting at 2.5 pF*[ohm]
* Fast turn-On and turn-Off times in the microsecond range
* Measure 1.8 mm x 2 mm x 3.8 mm
Microsemi ON Semiconductor Power MOS 8 is a high-speed, The [e.sup.2]PowerEdge low high voltage N-channel [V.sub.CE(sat)] SMT switch-mode power MOSFET. transistors feature high This FREDFET version has a current gain capability and drain-source (body) diode for are designed for DC/DC high reliability in ZVS phase converters and power shifted bridge and other management applications in circuits through reduced portable and battery [t.sub.rr], soft recovery, powered products. The high and high recovery dv/dt current gain allows the capability. Low gate charge, devices to be driven high gain and a reduced ratio directly from PMU's control of [C.sub.rss]/[C.sub.iss] outputs, and the Linear result in desirable noise Gain (Beta) makes them immunity and low switching suitable in analog loss. amplifiers. Model Type APT7F120B/APT7F120S N-Channel NSS12501UW3T2G NPN FREDFET Transistor Applications ZVS phase shifted and other DC/DC converters; power full bridge; half bridge; PFC management in portable and and other boost converter; battery powered products; buck converter; single and low voltage motor controls two stitch forward; flyback in mass products; automotive industry Key Features * Fast recovery body diodes: * Low [V.sub.CE(sat)] [T.sub.rr] = 190 ns (max.) * ESD robust at [T.sub.J] = 25[degrees]C * High current gain * Low [C.sub.rss] for * High cut-off frequency desirable noise immunity * Low profile package * Low gate charge * Linear Gain (Beta) * Avalanche energy rated * Pb-free * RoHS-compliant Key Specs * 1,200 [B.sub.VDSS]; * 12 [V.sub.(BR)CEO] [I.sub.D] = 7A (min.), 7A [I.sub.C] * 2.90[ohm] max. (max.) at [I.sub.C] = [r.sub.DS(on)] 10 mA DC, [I.sub.B]=0 * [C.sub.rss] = 31 pF (typ.) * Equivalent at [V.sub.GS] = OV, [r.sub.DS(on)] = [V.sub.DS] = 25V, f = 1 MHz 31 m[ohm] * Total power dissipation at * [V.sub.CE(sat)] = 0.035V [T.sub.C] = 25[degrees]C = (max.) at [I.sub.C] = 1A, 335W (max.) IB= 0.100A * [V.sub.GS] = [+ or -]30V * [f.sub.T] = 150 MHz (min.) at [I.sub.C] = 100 mA, [V.sub.CE] = 5V, f = 100 MHz Pricing Contact manufacturer $0.27 per unit in 10,000 Fairchild Semiconductor Vishay Siliconix The FDMA1023PZ is designed Vishay released seven p- specifically as a single channel power MOSFETs in a package device for the new PowerPAK ChipFET battery charge switch in package that offers cellular handsets and other desirable thermal portables. It features two performance in a 3 mm x independent P-Channel MOSFETs 1.8 mm footprint. Providing with low on-state resistance a small-footprint for minimum conduction alternative to MOSFETs in losses. When connected in the the TSOP-6 package, these typical common source devices feature low thermal configuration, bi-directional resistance values, and a current flow is possible. 0.8 mm thin height profile. Maximum power dissipation is 3W. Model Type FDMA1023PZ Dual P-Channel Si5479DU P-Channel 12V MOSFET (D-S) MOSFET Applications battery charching, load Load switch, PA switch and switching, boost and DC/DC battery switch for portable conversion applications Key Features * Max [r.sub.DS(on)] = * Thermally enhanced 72 m[ohm] at [V.sub.GS] = PowerPAK ChipFET package -4.5V, [I.sub.D] = -3.7A with small footprint, low * Max [r.sub.DS(on)] = On-resistance and 0.8 mm 95 m[ohm] at [V.sub.GS] = profile -2.5V, [I.sub.D] = -3.2A * RoHS-compliant * Max [r.sub.DS(on)] = * -12 [V.sub.DS] 130 m[ohm] at [V.sub.GS] = -1.8V, [I.sub.D] = -2A * Max [r.sub.DS(on)] = 195 m[ohm] at [V.sub.GS] = -1.5V, [I.sub.D] = -1A * RoHS-compliant Key Specs * -20[V.sub.DS], -3.7A, 72 m[ohm] [r.sub.Ds(on)] * [r.sub.DS(on)] = (max.) at TA = 25[degrees]C 0.021[ohm] at * Operating and storage [V.sub.GS] = -4.5V; junction temperature range: 0.028[ohm] at -55[degrees]C to [V.sub.GS] = -2.5V; 150[degrees]C 0.039[ohm] at * Low profile = 0.8 mm (max.) [V.sub.GS] = -1.8V in MicroFET 2 mm x 2 mm * Total gate charge = 21 nC package (typ.) * Pulse-drain current = -20A Pricing $0.39 each (1K pieces) U.S. delivery in 100,000- piece quantities starts at $0.20.
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|Title Annotation:||PRODUCT TECHNOLOGY REVIEW|
|Publication:||ECN-Electronic Component News|
|Date:||Aug 1, 2007|
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