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Toshiba announces commencement of construction of Fab 6 and Memory R&D Centre at Yokkaichi, Japan.

M2 EQUITYBITES-February 9, 2017-Toshiba announces commencement of construction of Fab 6 and Memory R&D Centre at Yokkaichi, Japan

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Toshiba Corporation (TOKYO:6502) announced on Wednesday that it has commenced construction of a new state-of-the-art semiconductor fabrication facility, Fab 6, and a new R&D centre, the Memory R&D Centre, at Yokkaichi Operations in Mie prefecture, Japan, the company's main memory production base.

Reportedly, Fab 6 will be dedicated to production of BiCS FLASH, Toshiba's innovative 3D Flash memory1. Like Fab 5, construction will take place in two phases, allowing the pace of investment to be optimised against market trends, with completion of Phase 1 scheduled for summer 2018.

Also, Toshiba will determine installed capacity and output targets and schedules by closely monitoring the market.

In addition, Toshiba will construct a Memory R&D Centre adjacent to the new fab, with completion targeting December 2017. This facility will advance development of BiCS FLASH and new memories.

Toshiba Corporation is a provider of technology in Energy, Infrastructure and Storage.

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Publication:M2 EquityBites (EQB)
Geographic Code:9JAPA
Date:Feb 9, 2017
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