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Tokyo Electron, Sematech Partner on 3D Interconnect and High-Mobility Channel Materials.

Tokyo, Japan, Jan 26, 2007 - (JCN) - Tokyo Electron Limited (TEL) and Texas-based Sematech announced a multi-year joint development program aimed at improving the prospects for using 3D interconnect technology and high mobility channel materials in advanced semiconductor manufacturing.

These programs mark the beginning of a new collaboration in which Sematech will partner with leading suppliers to address key technology challenges that are important to semiconductor customers. This offers suppliers lower R&D costs, accelerated results in technology development, and more efficient and effective technology implementation into leading-edge production fabs.

Under agreements involving an exchange of intellectual property and funding, Sematech and TEL engineers will collaborate on two separate projects, one a three-year effort to transcend the barriers to 3D processing in volume manufacturing, and the other a two-year project to advance the feasibility of using silicon-germanium in transistor gate stacks to increase processing speed.

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Publication:JCNN News Summaries
Date:Feb 6, 2007
Words:154
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