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Silsesquioxane hybrid nano-building blocks for improved photoresists in semiconductor technology.

The development and characterization of octa-silsesquioxane (POSS) hybrid nano-building blocks shows great potential for the improvement of semiconductor devices. The first objective in this Semiconductor Research Corporation-funded research is the synthesis of POSS-based macromolecules with both vinyl and benzocyclobutenyl functional groups. Following this, new resist formulations will be developed and optimum spin coating demonstrated. This will lead to the photoresist evaluation for EUVL--a technique in lithography utilizing extremely low wavelengths (-13.5nm)--which will be completed using facilities at the National Institute of Standards and Technology to determine processing parameters for development and etching that maximize resolution. Expected improvements in this field include improved resolution, sensitivity, image stability, and negligible off-gassing and tunable EUV absorption.

Currently, synthesis of the precursor silicate octa-anion has been done in bulk for the production of POSS macromolecules in high yields. From this precursor, the desired "vinyl"-POSS was developed as well as a trimethyl-POSS for practice of standard procedures. Further efforts in the immediate future include developing resists from the POSS structures for spin coating tests. In addition to spin coating, contrast curves for the resists will be obtained utilizing SEM prior to final characteristic evaluations to be done at NIST and industry partners.

Brandon Hardie, University of Idaho

Dr. Mark Roll, University of Idaho

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Author:Hardie, Brandon; Roll, Mark
Publication:Journal of the Idaho Academy of Science
Date:Dec 1, 2014
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