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Silicon heterostructure handbook; materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy.

0849335590

Silicon heterostructure handbook; materials, fabrication, devices, circuits, and applications of SiGe and Si strained-layer epitaxy.

Ed. by John D. Cressler.

CRC / Taylor & Francis

2006

1227 pages

$149.95

Hardcover

TK7871

Appropriate for practicing engineers and graduate students, this dense collection details the many advances in using silicon germanium (SiGe) and silicon strained-layer epitaxy to practice bandgap engineering of semiconductor devices. The 75 contributions are divided into eight sections on epitaxial growth techniques, SiGe heterojunction bipolar transistor (HBT) operation, BiCMOS technology, heterostructure field-effect transistors, optoelectronic components, measurement and modeling, and circuits. Topics include ultrahigh vacuum chemical vapor deposition, carbon doping, mixed- signal noise, resonant tunneling devices, quantum cascade emitters, the Mextram compact model, and linearization techniques.

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Publication:SciTech Book News
Article Type:Brief Article
Date:Jun 1, 2006
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