Printer Friendly

Silicon carbide and related materials; proceedings; 2v.

9780878493579

Silicon carbide and related materials; proceedings; 2v.

International Conference on Silicon Carbide and Related Materials (2007: Otus, Japan) Ed. by Akira Suzuki et al.

Trans Tech Publications

2009

1382 pages

$482.00

Hardcover

Materials science forum; vs.600-603

TA401

Selected and peer reviewed, over 350 papers offer scientific treatments of materials used for wide bandgap semiconductors, emphasizing recent developments in the basic science of the materials themselves and the maturing device and processing technologies. They cover silicon carbide (SiC) growth and epitaxial growth, physical properties and characteristics, nanostructures and graphene, processing, devices, and III-nitrides and other related materials. Among specific topics are growing bulk crystal at a constant rate using a new design of resistive furnace, the solution growth of 3C-SiC single crystals by the cold crucible technique, Raman scattering studies of stress distribution around dislocation, the electronic band structure of cubic silicon nanowires, the anisotropic etching of SiC in the mixed gas of chlorine and oxygen, the temperature dependence of plasma chemical vaporization machining of silicon and silicon carbide, the influence of passivation oxide properties on SiC field-plated buried gate MESFETs, a high power-density converter, surface morphology in an AIN epitaxial layer grown on various SiC substrates by the sublimation closed space technique, and diamond doped by hot iron implantation. The two volumes are paged together, and both contain the author index; there is no subject index.

([c]2009 Book News, Inc., Portland, OR)

COPYRIGHT 2009 Book News, Inc.
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2009 Gale, Cengage Learning. All rights reserved.

Article Details
Printer friendly Cite/link Email Feedback
Publication:SciTech Book News
Article Type:Book review
Date:Dec 1, 2009
Words:236
Previous Article:Type 2 diabetes; methods and protocols.
Next Article:Proteomics; methods and protocols.
Topics:


Related Articles
Organosilicon Chemistry - From Molecules to Materials, vol. 2.
Silicon carbide 2006--materials, processing and devices; proceedings.
Porous silicon carbide and gallium nitride; epitaxy, catalysis, and biotechnology applications.
Classics in corporate law and economics; 2v.
Silicon carbide 2008; materials, processing and devices; proceedings.
Nanomaterials by severe plastic deformation; proceedings; 2v.
Thin films and porous materials; proceedings.
Nanomaterials; synthesis and applications.
Silicon carbide and related materials; proceedings.
SiAlONs and non-oxides; proceedings.

Terms of use | Privacy policy | Copyright © 2019 Farlex, Inc. | Feedback | For webmasters