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Reportlinker Adds Comparison of 3-bit per cell NAND Flash Memories.

NEW YORK -- Reportlinker.com announces that a new market research report is available in its catalogue.

Reportlinker Adds Comparison of 3-bit per cell NAND Flash Memories

http://www.reportlinker.com/p0137744/Reportlinker-Adds-Comparison-of-3-bit-per-cell-NAND-Flash-Memories.html

This report compares the 3-bit per cell NAND flash memory architectures and key parameters of SanDisk/Toshiba, Hynix and Samsung and analyzes the advantages and disadvantages of each implementation.

Contents Executive Summary Introduction Three-bit per cell NAND Flash Memories SanDisk/Toshiba 56nm 16Gb 3-bit/cell NAND Flash Memory Summary Page Buffer Page Organization Cache algorithms Source Line Bias Error Compensation Power Routing Organization Data Path All Bitline vs. Interleaved Architecture Program Speed ABL - Considerations on Scalability Hynix 48nm 32Gb 3-bit/cell NAND Flash Memory Summary Chip Architecture Pass Bit Detector Circuits Smart Blind Program Algorithm Start Bias Controlled Program Algorithm 32Gb 32nm 3-bit/cell SanDisk/Toshiba Summary Chip Architecture Program Verify Read Before Programming Compact Row Decoder Extended Column Architecture Samsung 51nm 16Gb 3-bit/cell NAND Flash Memory Summary Summary References About the Author About Forward Insights Services Contact Report Offerings List of Figures Figure 1 NAND Flash Areal Storage Density Trend Figure 2 ISPP for 2-bit and 3-bit per cell Technology Figure 3 ABL architecture Figure 4 Page Organization and Programming Figure 5 Conventional Cache Program Figure 6 FSC +MCR Figure 7 Source line Bias Error: Ideal Case Figure 8 Source line Bias Error: Real Case Figure 9 Source line Bias Error: Source Tracking Figure 10 Chip comparison Figure 11 Power Bus Routing: 16Gb D2 vs. 16Gb x3 (rotated array) Figure 12 Data Path: 16Gb D2 vs 16Gb x3 (rotated array) Figure 13 Program speed improvements Figure 14 ABL Architecture with 8K Page Size Compared to Interleaved Architecture with 4KB Page Size Figure 15 ABL Architecture with 8K Page Size Compared to Interleaved Architecture with 8KB Page Size Figure 16 ABL Architecture vs. Interleaved Architecture: Double Sided Page Buffer Figure 17 BLC Line Density vs. Core Scalability Figure 18 3-bit/cell NAND Flash Program Time Figure 19 Die micrograph of Hynix 32Gb 8LC NAND Flash Memory Figure 20 Pass Bit Detector Figure 21 Smart Blind Program Figure 22 Start Bias Controlled Program Figure 23 SanDisk/Toshiba 32nm 32Gb 3-bit/cell NAND Flash Die Micrograph Figure 24 Program Inhibit Figure 25 Schematic view of row decoder Figure 26 String Organization Figure 27 Endurance properties Figure 28 Current Degradation due to Series Resistance List of Tables Table 1 Features Summary of SanDisk/Toshiba 56nm 16Gb 3-bit/cell NAND Flash Memory Table 2 ABL vs. Interleaving Table 3 Features Summary of Hynix 48nm 32Gb 3-bit/cell NAND Flash Memory Table 4 Features Summary of SanDisk/Toshiba 32nm 32Gb 3-bit/cell NAND Flash Memory Table 5 Features Summary of Samsung 51nm 16Gb 3-bit/cell NAND Flash Memory Table 6 Key Parameters Comparison Table 7 Key Features and Advantages & Disadvantages of SanDisk/Toshiba 56nm 16Gb 3-bit/cell NAND Flash Memory Table 8 Key Features and Advantages & Disadvantages of Hynix 48nm 32Gb 3-bit/cell NAND Flash Memory Table 9 Key Features and Advantages & Disadvantages of SanDisk/Toshiba 32nm 32Gb 3-bit/cell NAND Flash Memory Table 10 Key Features and Advantages & Disadvantages of Samsung 51nm 16Gb 3-bit/cell NAND Flash Memory To order this report: Reportlinker Adds Comparison of 3-bit per cell NAND Flash Memories http://www.reportlinker.com/p0137744/Reportlinker-Adds-Comparison-of-3-bit-per-cell-NAND-Flash-Memories.html More market research reports here!
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Date:Aug 11, 2009
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