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RAMTRON AWARDED FUNDAMENTAL PATENTS IN SEMICONDUCTOR MEMORIES

 RAMTRON AWARDED FUNDAMENTAL PATENTS IN SEMICONDUCTOR MEMORIES
 COLORADO SPRINGS, Colo., May 12 /PRNewswire/ -- Ramtron


International Corp., a majority-owned subsidiary of Ramtron Holdings Ltd. (ADR - NASDAQ: MEMRY), today announced that it has been granted six fundamental semiconductor patents by the U.S. Patent and Trademark Office.
 The patents contain 136 claims covering the use of ferroelectric material in a broad range of nonvolatile semiconductor products and methods for manufacturing high-density CMOS dynamic random access memory (DRAM) products.
 The patents granted Ramtron during the last 12-month period include:
 U.S. Patent
 Number Title
 5,109,357 Charge Magnified DRAM Cell
 5,104,822 Method for Creating Non-Patterned Contacts & Stacked
 Capacitors
 5,075,817 Trench Capacitor for Large Scale Integrated Memory
 5,043,790 Self Aligned Contacts Using Two Nitrides Process
 5,024,964 Method of Making Ferroelectric Memory Devices
 5,005,102 Multilayer Electrodes for Integrated Circuit Capacitors
 These recently awarded patents have increased Ramtron's portfolio of issued U.S. and international patents to 32 with an additional 75 patents filed in the United States, Europe and Japan.
 "Our patent portfolio covers virtually any application of ferroelectric materials to volatile and nonvolatile semiconductor memory, and key methods for manufacturing sub-micron CMOS memory products," commented Elliott Philofsky, Ramtron's vice president of technology.
 "The complexity and cost of today's semiconductor manufacturing processes are hindering the future of high-density memories. We feel that ferroelectrics are critical to the development of these memories and the answer to simpler, more cost-effective memory products. Many of the world's largest semiconductor companies, particularly in Japan, are coming to the same conclusion given the recent increase of ferroelectric memory development disclosures."
 Ramtron International Corporation, founded in 1984, develops, manufactures, and markets ferroelectric random access memory (FRAM)(R) products based on ferroelectric materials with unique nonvolatile and high-dielectric constant storage characteristics. Ramtron's FRAM products are the first semiconductor random access memories to combine high speed read/write performance and unlimited endurance with nonvolatility, or the ability to retain data without power, of magnetic media. Ramtron introduced 4K-bit and 16K-bit FRAM products in January and August 1991, respectively, and continues development on higher density versions. Ramtron's FRAM products are produced at the company's Class 1 six-inch wafer fabrication facility in Colorado Springs. The company also develops and markets complementary metal oxide semiconductor (CM)S) high-performance specialty DRAMs.
 -0- 5/12/92
 /CONTACT: Don Carrigan of Ramtron International, 719-481-7000, or Mark S. Cohen of Cameron Associates, 212-644-9560, for Ramtron International/
 (MEMRY) CO: Ramtron International Corp. ST: Colorado IN: CPR SU:


CK-LR -- NY002 -- 8938 05/12/92 08:31 EDT
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Publication:PR Newswire
Date:May 12, 1992
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