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PECVD-deposited germanium chalcogenide films for use in memory devices.

Renewed interest in the use of germanium chalcogenide semiconductors for use in memory devices has been driven by their unique properties. They have very stable amorphous and crystalline phases, and the change in the electron conductance between the two phases can be several orders of magnitude. The degree of order in the amorphous phase appears to be largely localized, but the materials are unique; some longer range channels or island-to-island structure may exist as well. This substructure may be a function of the film stoichiometry and metal doping. These properties lend themselves well to the use of germanium chalcogenides in phase-memory, conductive-bridging RAM, and Resistive RAM devices.

In this study, PECVD of germanium chalcogenide thin films was done utilizing GeCI4, H2S, and alkyl chalcogenides. Their use for thin film deposition of this material was evaluated. The effect of reactor flow rate and plasma power on deposition rate, composition, and film morphology were determined. Based on these results, germanium chalcogenide thin films were deposited by PECVD in several stoichiometries, as thin layers in phase memory and resistive RAM devices. Results from the thin film studies and the use of these thin films in memory devices will be discussed.

Rene Rodriguez, Idaho State Univ., Dept, of Chemistry

Sandra Lundell, Idaho State Univ., Dept, of Chemistry

Quinn Davis, Idaho State Univ., Dept, of Chemistry

Lisa Lau, Idaho State Univ., Dept, of Chemistry

Benjamin Poulter, Idaho State Univ., Dept, of Chemistry

Kris Campbell, Boise State Univ., Dept, of Electrical and Computer

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Title Annotation:56TH ANNUAL SYMPOSIUM OF THE IDAHO ACADEMY OF SCIENCE: THEME: ENERGY, MATERIALS, AND NANOTECHNOLOGY; plasma-enhanced chemical vapor deposition
Author:Rodriguez, Rene; Lundell, Sandra; Davis, Quinn; Lau, Lisa; Poulter, Benjamin; Campbell, Kris
Publication:Journal of the Idaho Academy of Science
Article Type:Abstract
Geographic Code:1USA
Date:Dec 1, 2014
Words:247
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