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New physics lets thyristor reach higher level.

For smart grid applications, wide-band-gap materials such as silicon carbide (SIC) offer a better alternative as they are capable of higher switching speeds, a higher breakdown voltage, lower switching losses, and a higher junction temperature than traditional silicon-based switches. The first SiC-based device to reach market is the Ultra-high-voltage Silicon Carbide Thyristor (SiC Thyristor), developed by GeneSiC Semiconductor Inc., Dulles, Va., with support from Sandia National Laboratories, Albuquerque, N.M., and partners.


The developers adopted a different operational physics for this device, which operates on minority carrier transportation and an integrated third terminal rectifier, which is one more than other commercial SiC devices. Developers adopted a new fabrication technique that supports ratings above 6,500 V, as well as a new gate-anode design for high-current devices. Capable of performing at temperatures up to 300 C and current at 80 A, the SiC Thyristor offers up to 10 times higher voltage, four times higher blocking voltages, and 100 times faster switching frequency than silicon-based thyristors.

* GeneSiC Semiconductor Inc.,

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Title Annotation:Electrical Devices; Ultra-high-voltage Silicon Carbide Thyristor developed by GeneSiC Semiconductor Inc.
Comment:New physics lets thyristor reach higher level.(Electrical Devices)(Ultra-high-voltage Silicon Carbide Thyristor developed by GeneSiC Semiconductor Inc.)
Publication:R & D
Article Type:Brief article
Geographic Code:1USA
Date:Sep 1, 2011
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