New photomask designed for SEM magnification calibration. (News Briefs).
The new mask designed for 193 nm lithography is the state-of-the art, and will provide 100 nm lines and 100 nm spaces and all the larger, up to 1.5 mm sized line pairs in x and y directions. The new design also includes areas for optical scatterometry measurements and a large field of patterns that can be used for geometry measurements in the SEMs at both low and high accelerating voltages. These samples can be used not only in SEMs, but also with any other microscopes. The new batch of samples will be made through cooperation with International SEMATECH. They will be individually much less expensive because they will be made using regular integrated circuit manufacturing processes. CONTACT: Andras Vladar, (301) 975-2399; firstname.lastname@example.org.
|Printer friendly Cite/link Email Feedback|
|Title Annotation:||scanning electron microscope|
|Publication:||Journal of Research of the National Institute of Standards and Technology|
|Article Type:||Brief Article|
|Date:||Mar 1, 2002|
|Previous Article:||DAVE: Data Analysis and Visualization Environment. (News Briefs).|
|Next Article:||Shape-sensitive measurement of nested lines. (News Briefs).|