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New photomask designed for SEM magnification calibration. (News Briefs).

In preparation for the issuance of a new batch of the successful scanning electron microscope (SEM) magnification calibration artifacts, Reference Material (RM) 8090 and Standard Reference Material (SRM) 2090, NIST scientists have completed design of a new lithography photomask. In the past, all individual samples of RM 8090 or SRM 2090 were made by direct write electron-beam lithography, because optical lithography did not have the required resolution. That limitation has recently changed with the implementation of 193 nm lithography.

The new mask designed for 193 nm lithography is the state-of-the art, and will provide 100 nm lines and 100 nm spaces and all the larger, up to 1.5 mm sized line pairs in x and y directions. The new design also includes areas for optical scatterometry measurements and a large field of patterns that can be used for geometry measurements in the SEMs at both low and high accelerating voltages. These samples can be used not only in SEMs, but also with any other microscopes. The new batch of samples will be made through cooperation with International SEMATECH. They will be individually much less expensive because they will be made using regular integrated circuit manufacturing processes. CONTACT: Andras Vladar, (301) 975-2399; andras.vladar@nist.gov.
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Title Annotation:scanning electron microscope
Publication:Journal of Research of the National Institute of Standards and Technology
Article Type:Brief Article
Geographic Code:1USA
Date:Mar 1, 2002
Words:206
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