NIST DATA FACILITATE MATERIALS DEVELOPMENT FOR NEXT GENERATION IC CHIP.
NIST originally developed the methodology for characterization of low-k RD under a CRADA with International SEMATECH (ISMT). Internal support was also provided by the NIST Office of Microelectronics Programs. The methodology is based on a unique combination of x-ray and neutron scattering measurements that provide critically needed data on the structure of porous thin films. Over the past 3 years, more than 30 candidate materials from ISMT and its member companies have been characterized by 41ST. The data provided by 41ST have helped ISMT establish a low-k RD database for selection of viable candidate materials for process integration. It has also enabled ISMT to provide feedback to the material suppliers for further improvement of their RD materials.
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|Publication:||Journal of Research of the National Institute of Standards and Technology|
|Date:||Mar 1, 2001|
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