NIST/SEMATECH collaboration leads to breakthrough on interface state density extraction.
As the lateral feature sizes of complementary metal oxide semiconductor field-effect-transistors are scaled downward, the gate dielectric capacitance must be increased in order to maintain the same drive current. Historically, this has been accomplished by decreasing the physical thickness of Si[O.sub.2]. As the thickness of Si[O.sub.2] moves toward 1 nm, the gate leakage current becomes unacceptably high. Therefore, numerous alternate dielectrics (e.g., Zr[O.sub.2], Hf[O.sub.2], Hf or Zr silicates, [La.sub.2][O.sub.3]) with dielectric constants greater than Si[O.sub.2] recently have been under intense investigation. These dielectrics typically have a large density of electrically active defects near the silicon substrate (interface states). It is important to be able to measure the density of these defects accurately.
CONTACT: Eric Vogel, (301) 975-4723; email@example.com.
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|Title Annotation:||General Developments|
|Publication:||Journal of Research of the National Institute of Standards and Technology|
|Article Type:||Brief Article|
|Date:||Jul 1, 2003|
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