Printer Friendly

NIST/SEMATECH collaboration leads to breakthrough on interface state density extraction.

A NIST scientist, in collaboration with researchers at International SEMATECH, recently completed a study of the proper use of capacitance-voltage measurements to extract interface state density of high dielectric-constant (alternate) gate dielectrics for metal-oxide-semiconductor (MOS) devices. Recently, quasi-static analysis has been used to extract the interface state density. The NIST scientist and his collaborators determined that this quasi-static analysis can give incorrect results and that a proper frequency dependent analysis is required.

As the lateral feature sizes of complementary metal oxide semiconductor field-effect-transistors are scaled downward, the gate dielectric capacitance must be increased in order to maintain the same drive current. Historically, this has been accomplished by decreasing the physical thickness of Si[O.sub.2]. As the thickness of Si[O.sub.2] moves toward 1 nm, the gate leakage current becomes unacceptably high. Therefore, numerous alternate dielectrics (e.g., Zr[O.sub.2], Hf[O.sub.2], Hf or Zr silicates, [La.sub.2][O.sub.3]) with dielectric constants greater than Si[O.sub.2] recently have been under intense investigation. These dielectrics typically have a large density of electrically active defects near the silicon substrate (interface states). It is important to be able to measure the density of these defects accurately.

CONTACT: Eric Vogel, (301) 975-4723; eric.vogel@nist.gov.
COPYRIGHT 2003 National Institute of Standards and Technology
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2003, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

Article Details
Printer friendly Cite/link Email Feedback
Title Annotation:General Developments
Publication:Journal of Research of the National Institute of Standards and Technology
Article Type:Brief Article
Date:Jul 1, 2003
Words:214
Previous Article:Research progresses toward critical molecular electronics measurements.
Next Article:Optimal vector-network-analyzer calibration algorithm developed by NIST staff.
Topics:


Related Articles
Pass the plasma, ... please: some engineers and scientists are working out new collaborative strategies to speed technological progress.
NIST DATA FACILITATE MATERIALS DEVELOPMENT FOR NEXT GENERATION IC CHIP.
SINGLE-CRYSTAL CRITICAL DIMENSION REFERENCE MATERIALS DELIVERED BY NIST RESEARCHERS TO INTERNATIONAL SEMATECH.
Message from the chief editor.
Neutron probes focus the search for insulators. (News Briefs).
Foreword.
Nist publishes online e-handbook of statistical methods. (General Developments).
Dependence of electron density on Fermi energy in n-type gallium antimonide.
NIST develops high-resolution technique for characterization of nanoscale patterns with Small Angle X-Ray Scattering.
Can R&D consortia increase the PCB industry's innovation output? Collaborative research provides an economical avenue that fosters process innovation...

Terms of use | Privacy policy | Copyright © 2019 Farlex, Inc. | Feedback | For webmasters