MoSys licenses 1T-SRAM-R embedded memory to Hitachi Information Technology.
"MoSys' 1T-SRAM-R is a valuable solution for embedding large high-performance memories economically into SoC designs," said Mr. Yoshiteru Keikoin, senior chief engineer at Hitachi-IT. "MoSys' 1T-SRAM-R technology in collaboration with our leading edge system concept, addresses our growing need for higher quality, high-performance, low-power embedded memory with the cost advantages that are necessary for today's products."
Hitachi-IT joins other announced licensees including National Semiconductor, Philips Semiconductor and Motorola's semiconductor products sector in using 1T-SRAM-R in a range of applications that require cost savings combined with the highest levels of quality and reliability. The SoC chips will be manufactured using TSMC's 0.13-micron standard logic process. Through the inclusion of patented Transparent Error Correction (TEC) technology, 1T-SRAM-R memory sets a new standard for quality of embedded memory.
"MoSys has demonstrated strong success in delivering its 1T-SRAM technology with customers having already shipped more than 45 million chips," said Mark-Eric Jones, vice president and general manager of intellectual property for MoSys. "Japan continues to be a powerful market for MoSys and its 1T-SRAM technology across a wide range of applications."
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|Comment:||MoSys licenses 1T-SRAM-R embedded memory to Hitachi Information Technology.|
|Publication:||EDP Weekly's IT Monitor|
|Date:||Dec 2, 2002|
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