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Microsemi unveils enhancement mode Gallium Nitride FETs.

TELECOMWORLDWIRE-March 17, 2011-Microsemi unveils enhancement mode Gallium Nitride FETs(C)1994-2011 M2 COMMUNICATIONS

Semiconductor technology provider Microsemi Corporation (Nasdaq:MSCC) announced on Thursday the development of enhancement mode Gallium Nitride field-effect transistors (FETs) for satellites and other military power conversion, point-of-load and high speed switching applications.

According to the company, the FETs are built on a wide band gap material, which increases performance over current radiation-hardened silicon MOSFETs.

The FETs offer the following features: low parasitic capacitance which reduces switching losses by at least 50% resulting in higher efficiency circuits; lower on-resistance to reduce conduction losses resulting in circuit efficiency gains; as well as excellent radiation performance.

The company also said it is working with Efficient Power Conversion (EPC) in the development of a complete line of high performance FETs for space and military applications. The first new devices will be offered by the company in voltages of 40V, 60V, 100V, 150V, and 200V and will have Drain-to-Source on-resistance values of 4 mili-ohms to 100 mili-ohms.

The devices are also expected to deliver high temperature performance with junction temperatures approaching 300 [degree sign]C.

Prototype customer samples are expected to be available by mid-2011 with production quantities by November 2011. No pricing details were disclosed.

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Date:Mar 17, 2011
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