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Materials science and technology for nonvolatile memories; proceedings.


Materials science and technology for nonvolatile memories; proceedings.

Materials Science and Technology for Nonvolatile Memories Symposium (2008, San Francisco, CA) Ed. by Dirk J. Wouters et al.

Materials Research Society


221 pages



MRS symposium proceedings; v.1071


These proceedings for the March 2008 symposium include both invited and submitted papers on advanced flash and resistive switching RAM including cross point and organic memories. Subjects include advanced flash memory (with papers including such topics as flash memory scaling from material selection to performance improvement), oxide resistive switching memory (temperature dependence of electrical properties of NiO thin films for resistive RAM), organic resistive switching memory (resistive switching of Cu and Ag based metal-organic charge transfer complexes), particle-based organic memory (effects of Au nanocrystals embedded in conductive polymer on nonvolatile memory windows), organic ferroelectric memory (an organic field effect transistor for nonvolatile memory applications), new phase change memory and deposition methods (reversible electrical resistance switching to GeSbTe thin films) and future memory concepts (concentric metallic-piezoelectric microtube arrays). Obviously ferroelectric-feromagnetic and ferroic materials remain popular, but phase change material was mostly covered in a separate symposium at the same conference.

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Publication:SciTech Book News
Article Type:Book review
Date:Dec 1, 2008
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