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MICROSEMI DEBUTS 600V SCHOTTKY DIODE POWERMITE PACKAGE.

Microsemi Corp. (Nasdaq:MSCC), Irvine, Calif., has announced that as a result of its alliance with Cree Inc. (Nasdaq:CREE), Microsemi has produced the first in a series of commercial silicon carbide (SiC) Schottky diodes featuring Microsemi's patented Powermite(R) surface mount packages.

Designated the UPSC200, 400, 600(TM) and UPSC203, 403, 603(TM) Series, the new SiC Schottky diodes are rated at 1Amp-600 volts and 4Amp-600 volts. The UPSC200, 400, 600 features a maximum current rating of 1Amp, a forward voltage drop of 1.6 Volts typical and a reverse leakage of 20uA typical. The UPSC4600 features a maximum current rating of 4Amps, forward voltage drop of 1.7 Volts typical and a reverse leakage of 20uA typical.

The UPSC200, 400, 600 are packaged in the two-lead Powermite package having a 2.54mm x 2.67mm footprint while the UPSC4600 is packaged in Microsemi's three-lead Powermite 3(R) package, with a 4.82mm x 5.33mm footprint. These two products offer the highest power and voltage combination available in packages this small. Conventional silicon-based devices are four times the size.

Typically Schottky diodes are used for their high efficiency in low voltage (5-40 Volt) power applications where their "near zero" switching speed makes them the most cost-effective solution. In high voltage applications (greater than 100 Volts), designers switch to ultra fast rectifiers which have a higher resistance and slower switching speed. Microsemi's new SiC high voltage line of Schottkys provides a combination of efficiency and high voltage so circuit designers can achieve performance metrics never previously possible.

"These new silicon carbide devices are powerful additions to our line of surface mount Schottky diodes," said Manuel Lynch, vice president of business development. "We expect their combination of efficiency and high voltage to be particularly valuable in cardioverter defibrillator applications, military aircraft and high voltage telecommunication switching equipment," he said.

Microsemi's alliance with Cree joins Cree's expertise in silicon carbide technology with Microsemi's packaging and application marketing strengths. The two companies announced the formation of the SiC Schottky diode alliance in May 2001.

In commenting on the product introduction, Cree president and CEO Charles Swoboda stated, "We believe that with Cree's silicon carbide Schottky diode 'inside' the Powermite package, Microsemi has an exciting and new enabling technology for their power semiconductor product line."

Both devices are available for immediate sampling and volume shipment. The UPSC200, 400, 600 series is priced at $15 in 1,000-piece quantities and the UPSC203, 403, 603 at $25 in 1,000-piece quantities.

Complete technical information and data sheets are available on the Microsemi Web site, http://www.microsemi.com.

About Microsemi

Microsemi is a leading designer, manufacturer and marketer of analog, mixed-signal and discrete semiconductors. The company's semiconductors manage and regulate power, protect against transient voltage spikes and transmit, receive and amplify signals.

Microsemi products include individual components as well as complete circuit solutions that enhance customer designs by providing battery optimization, reducing size or protecting circuits. Markets the company serves include mobile connectivity, computer/peripherals, telecommunications, medical, industrial/commercial, space/satellite and military.

More information, visit http://www.microsemi.com or call 949/221-7112.
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Comment:MICROSEMI DEBUTS 600V SCHOTTKY DIODE POWERMITE PACKAGE.
Publication:Electro Manufacturing
Geographic Code:1USA
Date:Nov 1, 2001
Words:519
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