Long wavelength APD with high sensitivity and gain. (Optoelectronics & Displays).
Hamamatsu Corporation has announced the availability of the S8890 Series of silicon (Si) avalanche photodiodes (APDs) that feature high sensitivity and gain and low terminal capacitance. The design and performance of the S8890 Series make the Si APDs suited for YAG laser detection and applications requiring detection of long wavelength light. Covering the 400 nm to 1,100 nm spectral response range, the 58890 Series achieves peak sensitivity of 67 A/W at 940 nm. Dark current ranges from typically 0.2 nA (S8890-02) to 15.0 nA (88890-30). The Si APDs have a terminal capacitance range of 0.2 pF (S8890-02) to 8.0 pF (S8890-30). All five Si APDs in the series have 100 nm gain at 800 nm. All members of the series feature a TO-5 package, except the S8890-30, which has a TO-8 package. A variety of active areas is available, depending upon the model selected. Available active areas are 0.03 [mm.sup.2], 0.19 [mm.sup.2], 0.78 [mm.sup.2], 1.77 [mm.sup.2] and 7.0 [mm.sup.2]. The S8890 Series has a starting price of $52.00 i n small OEM quantities.
Hamamatsu Corp., 360 Foothill Rd., Bridgewater, NJ 08807; (800) 524-0504; www.usa.hamamatsu.com.
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|Publication:||ECN-Electronic Component News|
|Date:||May 15, 2003|
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