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International Rectifier Introduces Bi-Directional Dual MOSFET in the FlipFET Package: 80% Smaller than TSSOP-8.

Technology Editors

EL SEGUNDO, Calif.--(BUSINESS WIRE)--Jan. 29, 2003

International Rectifier, IR(r) (NYSE:IRF), introduces the IRF6156, a dual bi-directional HEXFET(r) power MOSFET in a common drain configuration that is 80% smaller than devices in the TSSOP-8 package, with a profile less than 0.8mm. The IRF6156 is housed in the International Rectifier proprietary FlipFET(tm) package. The small size makes the IRF6156 ideal for Li-ion battery pack safety and protection circuits for cell phones, notebook computers, PDAs and digital cameras.

Li-ion battery packs are flammable, and require protection circuits to prevent damage from over-charging. A protection circuit is also required to detect a short circuit condition, and disconnect the battery from the load.

The proprietary FlipFET package uses no lead frame or mold compound. In essence, the die is the package, and reduces thermal resistance from junction-to-PCB to 35 degrees Celsius/ per watt compared to more than 60 degrees Celsius per watt for SO-8 package devices. In addition, thermal resistance junction-to-ambient is 50 degrees Celsius per watt maximum. All of the IRF6156 terminals are on a single side of the die, so stray inductance and other device packaging losses are minimized or eliminated.

Shawn O'Grady, Marketing Manager for Portable Products at International Rectifier, said, "IR's FlipFET MOSFETs accommodate the ever-shrinking form factors of handheld applications without sacrificing current carrying capability. As a bonus for manufacturers, standard surface mount equipment and techniques can be used to mount the new device on a PCB."

A data sheet is posted:

Availability and Pricing

The new IRF6156 MOSFET in the FlipFET package is available immediately. Pricing begins at US $0.80 each in 10,000-unit quantities.

About International Rectifier

International Rectifier is recognized as a leading supplier of power semiconductors and systems solutions. IR's patented HEXFET(r) power MOSFETs, IGBTs and high-voltage ICs make electricity work smarter in industrial automation and controls, automotive electrical systems, consumer electronics, computers and peripherals, telecommunications, lighting and satellite/launch vehicle applications. Visit the International Rectifier Web site at

Trademark Notice

IR(r) and HEXFET(r) are registered trademarks of International Rectifier Corporation. All other product names noted herein may be trademarks of their respective holders.
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Publication:Business Wire
Geographic Code:1USA
Date:Jan 29, 2003
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