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Indium nitride and related alloys.


Indium nitride and related alloys.

Ed. by T.D. Veal et al.

CRC / Taylor & Francis


628 pages




Between 2000 and 2002, the bandgap of the semiconductor material was measured at 0.7 rather than about 1.9 eV as previously thought, and the discovery sparked renewed interest in the material to explore what other useful virtues it might be hiding. Physicists, materials scientists and engineers, electrical and computer engineers, and related researchers review what has been learned since then about growing, characterizing, and understanding indium nitride (InN) and some of its close kin. Among their topics are molecular-beam epitaxy, conductivity and chemical trends, optical properties, ellipsometry, theory of InN surfaces, InN-based dilute magnetic semiconductors, and nanocolumns.

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Publication:SciTech Book News
Article Type:Book review
Date:Dec 1, 2009
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