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IXYS Announces High-Current GigaMOS TrenchT2TM Power MOSFETs in Low-profile DE-Series Packages.

MILPITAS, Calif. & BIEL, Switzerland -- IXYS Corporation (NASDAQ:IXYS) announces new additions to its GigaMOS TrenchT2TM Power MOSFET portfolio with the release of the IXTZ550N055T2 and the IXFZ520N075T2 devices. These featured devices merge the high-current ratings of IXYS' GigaMOS TrenchT2TM product line with the advanced electrical, thermal and mechanical properties of IXYS' ultra-low profile DE-Series package technology. Available with blocking voltages from 55V to 250V, these GigaMOS devices feature very high-current capabilities (up to 550Amperes), providing superior switching performance in a broad range of high speed power switching applications where board space is limited. The combined ultra-low profile packaging and high-current capabilities of these devices present designers with a compact high-current MOSFET solution for high speed power switching designs such as DC-DC converters, inverters for solar power generation, electrical vehicles and electrical bikes, solid state relays, off-line UPS, synchronous rectification and primary-side switching.

These new GigaMOS devices are designed using IXYS' advanced-performance TrenchT2TM process technology. This process technology yields increased channel densities and exceptionally low values of Rds(on), as low 1mohm. These enhancements result in improved power handling capabilities and superior conduction and switching performance. Furthermore, they promote device consolidation through the reduction or elimination of multiple parallel lower current-rated MOSFET devices in high power switching applications. The resultant effect is a reduction in part count, as well as the number of required drive components, thus improving upon over-all system reliability and cost.

The newly introduced GigaMOS TrenchT2TM Power MOSFETs consist of two variants, the cost-effective GigaMOS TrenchT2TM Standard version and the high-performance HiPerFET(TM) version. Power switching capabilities of the high performance HiPerFET(TM) version is further enhanced via IXYS' proven HiPerFET(TM) process, yielding a fast intrinsic rectifier which provides low reverse recovery charge (Qrr) and excellent commutating dV/dt ratings. These featured diode properties play a pivotal role in overall device performance by providing faster transient response, increased power efficiency, improved ruggedness and higher operating frequencies. Additional product features include avalanche capabilities and a maximum operating temperature of 175 degrees Centigrade. These combined product attributes coupled with high current ratings, make for an ideal device for fast power switching applications.

IXYS' proprietary DE-Series packages present a new set of design advantages not previously delivered by conventional plastic discrete packages. The patented DE475 package is a low inductance, high power, high- performance surface mount package. This unique package design features a silicon chip on Direct Copper Bond (DCB) substrate offering high-voltage isolation capabilities (2500Vrms), excellent thermal transfer characteristics, increased temperature and power handling capabilities. With an ultra-low package profile (3.175mm height x 40.6mm length x 19.56mm width), the DE475 features one-tenth the weight and one-fifth the volume of conventional isolated high power packages (i.e. SOT-227), providing designers with a unique compact device that delivers excellent power handling capabilities and thermal transfer characteristics.

Additional product information may be obtained by visiting IXYS website at, or by contacting the company directly.

About IXYS Corporation

IXYS Corporation makes and markets technology-driven products to improve power conversion efficiency, generate solar and wind power and provide efficient motor control for industrial applications. IXYS offers a diversified product base that addresses worldwide needs for power control, electrical efficiency, renewable energy, telecommunications, medical devices, electronic displays and RF power.

Safe Harbor Statement

Any statements contained in this press release that are not statements of historical fact, including the performance, features and suitability of products for various applications, may be deemed to be forward-looking statements. There are a number of important factors that could cause the results of IXYS to differ materially from those indicated by these forward-looking statements, including, among others, risks detailed from time to time in the Company's SEC reports, including its Form 10-Q for the fiscal quarter ended June 30, 2010. The Company undertakes no obligation to publicly release the results of any revisions to these forward-looking statements.
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Publication:Business Wire
Geographic Code:1U9CA
Date:Oct 5, 2010
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