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Gettering and defect engineering in semiconductor technology GADEST 2005; proceedings.


Gettering and defect engineering in semiconductor technology GADEST 2005; proceedings.

International Autumn Meeting in [Title] (11th: 2005: Giens, France) Ed. by B. Pichaud et al.

Trans Tech Publications


814 pages



Solid state phenomena; v.108-109


The 126 papers of this proceedings were presented at the 11th International Meeting on Gettering and Defect Engineering in Semiconductor Technology, held in September 2005 at Giens, near Marseilles, in France. The papers are organized into 12 topics, including crystal growth; nanoelectronics; gettering and passivation techniques; point defects, dopants and diffusion; silicon for solar cells; and silicon-based optoelectronics. The papers, which feature current research by an impressively international group of scientists, are prefaced by an abstract and list of keywords, as well as an introduction outlining the topic and its background. In addition to the author index, a keyword index is provided.

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Publication:SciTech Book News
Article Type:Book Review
Date:Mar 1, 2006
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