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Fabrication of SiGe HBT BiCMOS technology.

9781420066876

Fabrication of SiGe HBT BiCMOS technology.

Ed. by editor, John D. Cressler.

CRC / Taylor & Francis

2008

$69.95

Hardcover

TK7871

Silicon-germanium (SiGe) and silicon (Si) strained-layer epitaxy are considered old solutions to the engineering of semiconductor devices, but using SiGe and Si in a production system has only recently become a practical reality. In these 14 articles, which range from surveys to reviews of specific applications, contributors describe the advance of SiGe and Si strained-layer epitaxy from the engineering experimentation bench to the fab. It gives a brief history of the field and an overview of the advances so far, then describes the fabrication technology, devices structures and their integration, applications to CMOS-compatible silicon-on-insulators, passive components, and examples of state-of-the-art applications from eight top producers. The very helpful appendices include coverage of the properties of silicon and germanium, generalized Moll-Ross relations, and integral charge-control relations. This works as a professional reference for researchers, engineering practitioners and managers as well as a research resource or classroom text for graduate students.

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Publication:SciTech Book News
Article Type:Book Review
Date:Jun 1, 2008
Words:177
Previous Article:Materials and process selection for engineering design, 2d ed.
Next Article:Measurement and modeling of silicon heterostructure devices.


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