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Extreme ultraviolet reflectivity intercomparison. (News Briefs).

In the microelectronics industry, the number of transistors on an integrated-circuit chip doubles about every 18 months (Moore's Law). This accomplishment has been made possible by utilizing shorter and shorter wavelengths of radiation for photolithography. Today, leading manufacturers are pushing deeper into the ultraviolet spectrum. However, the end is in sight for further incremental changes. Very different technology will be required for wavelengths shorter than 157 nm.

A number of leading chip companies have formed the EUV LLC research consortium to develop next-generation manufacturing technology. Extreme ultraviolet (EUV) radiation at 13.4 nm holds promise because of the fortuitous high reflectivity of Mo/Si multilayer mirrors at this wavelength.

The NIST/DARPA Reflectometry Facility at NIST's Synchrotron Ultraviolet Radiation Facility (SURF) was established in anticipation of these needs. It is the only facility in the world capable of making a complete measurement of reflectivity on the large mirrors being used by EUV LLC in their engineering test stand, an instrument intended to provide the foundation for the ultimate design of an EUV lithographic tool.

A just-completed international intercomparison confirmed NISTs capabilities. Seven test samples were studied by NIST, PTB, Lawrence Berkeley Laboratory, ASET (a Japanese consortium), and the Himejii Institute of Technology (Japan).

CONTACT: Thomas Lucatorto, (301) 975-3734; thomas.lucatorto@nist.gov.
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Publication:Journal of Research of the National Institute of Standards and Technology
Article Type:Brief Article
Geographic Code:1USA
Date:May 1, 2002
Words:212
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