Characterization of gallium nitride crystals deposited over nanosprings mat by atomic layer deposition method.
Silica nanosprings are found to have potential applications in sensing because of their large surface to volume ratio and the gallium nitride is a wide band gap semiconductor commonly used in optoelectronics for the production of LEDS, fabrication of high-power, high-temperature, high-frequency and high-breakdown voltage electrical devices. So the gallium nitride thin films deposited over silica nanosprings by atomic layer deposition method should have variety of applications in the sensing field as well as in the optoelectronics. In this study we have discussed the deposition of gallium nitride layer over silica nanosprings in a vacuum chamber with a base pressure of nearly 100 mtorr at a temperature of 425 [degrees]C using trimethylgallium and ammonia gas as precursors. We studied the surface morphology with scanning electron microscopic (SEM) images. The surface structure and chemistry were studied in terms of electron diffraction spectroscopy (EDS) and X-ray photoelectron spectroscopy (XPS) and the physical properties of deposited gallium nitride crystal were studied in terms of X-ray diffraction spectroscopy (XRD). All these results & further works will be presented in the poster.
Yuba Raj Poudel and Blaise-Alexis Fouetio Kengne
Department of Physics, University of Idaho
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|Title Annotation:||SESSION A5: FRIDAY, 9:30AM-11:30AM PSUB BEAR RIVER ROOM (312)|
|Author:||Poudel, Yuba Raj; Kengne, Blaise-Alexis Fouetio|
|Publication:||Journal of the Idaho Academy of Science|
|Article Type:||Author abstract|
|Date:||Jun 1, 2013|
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