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C-band and Ku-band Power Boasters.

These C-band and Ku-band power boosters include control and protection functions and consist of three major subsystems: the RF amplifier, a power supply unit and a cooling system. The amplifier section contains all of the necessary DC power conditioning circuitry for bias and sequencing of the RF amplifier devices as well as over-temperature protection, RF power detection, mute control and gain drop detection. Cain flatness is [pm]1 dB (max) and SWR is 1.5 (max). Designed specifically for use in very small aperture terminal applications, the unit's innovative mechanical design features high thermal dissipation efficiency with 12[degrees] to 15[degrees]C rising temperature, resulting in a higher MTBF number.

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Publication:Microwave Journal
Date:Apr 1, 2000
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