Printer Friendly

Applied Materials Expands Intellectual Property Portfolio for C4F6 Etch Process Applications.

Business Editors/High-Tech Writers

SANTA CLARA, Calif.--(BUSINESS WIRE)--April 15, 2002

Process Chemistry Patented for Critical Dielectric Etch Applications;

Outstanding Results Demonstrated at UMC

Applied Materials, Inc. today announced two newly granted U.S. Patents No. 6,326,307 and No. 6,362,109, the company's third and fourth patents covering the use of hexafluorobutadiene (C4F6) gas chemistry for critical dielectric etch applications. A high-performance etch process chemistry, C4F6 used in an Applied Materials etch system, enables the industry's move to the 100nm chip generation and beyond. Applied Materials' pioneering work with C4F6 has resulted so far in four patents issued, three additional patents allowed and about to issue, with more than 10 patents pending.

"These newest patents further the scope of our unique position to offer customers significantly improved techniques for critical dielectric etching using C4F6 process chemistry," said Dr. Diana Ma, vice president and general manager of Applied Materials Dielectric Etch Division. "Selecting the most appropriate etch process chemistry is the first step to addressing key etch issues for technologies to sub-100nm. Using this gas and our etch systems, customers can achieve higher selectivity and a wider process window while maintaining high etch rates for increased productivity."

The production benefits of using C4F6 gas for critical dielectric etching are verified by a leading chip foundry, United Microelectronics Company (UMC) of Hsinchu, Taiwan. "We have been using Applied Materials' C4F6 chemistry and eMAX(TM) etcher in production and are very pleased to see robust etch performance with low defectivity. We attribute the higher selectivity to photoresist and improved profile and CD control results largely to this advanced chemistry," said Dr. Tsu An Lin, etch module manager at UMC.

Applied Materials' C4F6 patents cover the use of the process gas for etching oxide films to provide improved process performance and increased process robustness and productivity. The C4F6 gas delivers high selectivity to photoresists and precise profile and critical dimension (CD) control for critical etch applications that include dual damascene, high aspect ratio and self-aligned contact etching. These capabilities are essential in etching the extreme feature sizes of sub-100nm devices and enable the use of low k dielectric films and 193nm photoresists. In addition to improving etch process performance, C4F6 gas features low global warming emissions and ozone depletion potential.

Applied Materials, Inc. is a Fortune 500 global growth company and the world's largest supplier of wafer fabrication systems and services to the global semiconductor industry. Applied Materials is traded on the Nasdaq National Market System under the symbol "AMAT." Applied Materials' web site is
COPYRIGHT 2002 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2002, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

Article Details
Printer friendly Cite/link Email Feedback
Publication:Business Wire
Date:Apr 15, 2002
Previous Article:S&P Global Credit Markets Digest -- European Update.
Next Article:i2 Chairman Sanjiv Sidhu Assumes Role of CEO; Greg Brady Transitions Into New Role.

Related Articles
Giving the etch to superior optics.
Applied Materials Surpasses 100th System Milestone for Silicon Etch DPS Centura; Company Sees Record Demand for Its Production-Proven Silicon Etch...
Applied Materials Introduces New High-Performance Gas Chemistry for Critical Etch Applications.
Applied Materials Builds Momentum in Dielectric Etch with Shipment of Over 400 Super e Chambers; Company's MERIE Technology Achieves Rapid,...
Now SLA Prototypes Can Have Many Textures.
Applied Materials Unveils New Photomask Etch System to Enable Nanometer Chip Generations.
Cypress Selects Applied Materials' Etch System for 90-Nanometer Production Line.
Hitachi High Technologies reaches 300mm Silicon Etch system milestone.
Photoresists: shaping the future of electronics technology.
Simulation tools speed the design of embedded capacitance layers; the use of simulation tools can improve the design process for embedded capacitor...

Terms of use | Copyright © 2017 Farlex, Inc. | Feedback | For webmasters