AMI Semiconductor's new mixed-signal tech reduces sensor interface ICS by up to 40 percent.
The second in AMI Semiconductor's series of I3T mixed-signal technologies, the I3T50 allows designers to integrate complex digital and precision analog circuitry, embedded microprocessors, and high-voltage functionality onto a single IC. The technology is ideal for a variety of applications such as sensor interfaces, transceivers, and actuator and motor drivers.
In developing its I3T50 technology, AMIS employed a proprietary deep trench isolation (DTI) technique that allows isolation distances between an ASIC's high-voltage devices to be dramatically reduced. Because of this, the chip area of an I3T50 ASIC or ASSP is between 10 percent and 60 percent lower than SoC solutions that use standard junction isolation schemes.
The I3T50 offers logic gate densities of 15,000/mm2 and can be used to create Smart Power SoC devices with gate counts as high as 500,000. In addition to the digital logic, these devices can incorporate high-voltage circuitry such as motor controller drives, DC/DC converters, and high-precision analog circuits including bandgap filters, ADCs and DACs.
The new 50V Smart Power technology is built around the AMIS low-voltage (LV) 0.35(micron) CMOS semiconductor process that features metal-metal capacitors and well-matched high-ohmic resistors. As with the 80V I3T80 technology announced in September 2002, the I3T50 is available with a full library of high-voltage DMOS and bipolar devices including high-performance floating vertical nDMOS transistors. These transistors have a drain-to-source on resistance (RDS (ON)) of below 50m(Omega).mm2 at a breakdown voltage in excess of 50V. Electrostatic discharge (ESD) capability for the I3T technology is rated at 4.5kV HBM (human body model) and 750V CDM (charge device model).
In addition to ARM7TDMI and 8051 embedded processor cores, a comprehensive family of IP blocks that simplify and speed the implementation of I3T50 Smart Power SoCs is available. These blocks include PLLs, USB interfaces, bus protocol controllers, and controllers for CAN and LIN connectivity. In addition, a wide variety of memory options, including ROM and RAM, are available, and high-density flash solutions will be developed.
"The I3T50 allows developers to rapidly implement Smart Power solutions that combine digital, analog, and high-voltage circuitry onto a single, compact Smart Power IC," said Marnix Tack, director of technology at AMI Semiconductor. "As a result, the I3T50 is an excellent vehicle with which to design compact and robust SoCs that save space, reduce component count, and minimize both cost and time-to-market."
The I3T50-based prototypes have already been produced and successfully evaluated in a target application. Working prototypes are available immediately.
AMI Semiconductor (AMIS) is a world leader in the design and manufacture of silicon solutions for the real world. As a widely recognized innovator in state-of-the-art mixed-signal technologies and mid-range digital ASICs including ASIC conversion services, AMIS is committed to providing customers with the optimal value, quickest time-to-market ASIC solutions. Offering unparalleled manufacturing flexibility and dedication to customer service, AMI Semiconductor operates globally with headquarters in Pocatello, Idaho, European corporate offices in Oudenaarde, Belgium, and a network of sales and design centers located in the key markets of the United States, Europe and the Asia Pacific region.
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|Title Annotation:||AMI Semiconductor I3T50|
|Publication:||EDP Weekly's IT Monitor|
|Date:||May 19, 2003|
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