512 Megabit DDR2 SDRAM devices. (Semiconductors).
Elpida Memory, Inc. has received DDR2 component validation for its 512 Megabit DDR SDRAM devices. The devices have a data transfer rate of up to 533 Mbps. They are designed to meet the demands of next-generation PCs, workstations and servers for high-speed and low power consumption by using 1.8V operation; thus, they are said to offer 30 percent lower power than DDR1-based devices. These high-bandwidth 512 Megabit DDR2 SDRAM devices (part numbers EDE51xxABSE) are designed using 0.11 micron process technology. They are organized as 128M words X 4 bits, 64M words X 8 bits and 32M words X 16 bits respectively, and they are available in FBGA packages. The DDR2-based devices have a CAS latency (CL) of 3, 4, 5 with a burst length of 4, 8. The devices' advanced DDR2 architecture features include off-chip driver impedance adjustment and on die termination (ODT) to provide better system timing and increased signal quality. Elpida Memory, Inc., 2001 Walsh Ave., Santa Clara, CA 95050; (408) 970-6600; www.elpida.com.
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|Publication:||ECN-Electronic Component News|
|Date:||Jul 1, 2003|
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