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50-VGaN HEMT family.

A family of 50-V unmatched GaN HEMT RF power devices now includes a 250-W part with a frequency range up to 3.0 GHz. The device offers high efficiency, enabling RF design engineers to use fewer components to design smaller and lighter linear amplifier circuits for commercial and military wireless communications and S-band radar applications. The new 50-V GaN HEMT devices provide a combination of high power and high gain with high-efficiency operation, making it possible for RF design engineers to replace several lower-power GaN HEMTs or multiple silicon LDMOS devices with a single device in their power-amplifier designs. Packaged in a four-leaded metal-flanged ceramic "Gemini" package, the new 250-W GaN HEMTs operate efficiently at full-rated power, reducing the need for complex thermal management systems.

Their higher power and efficiency rating, combined with a frequency range up to 3.0 GHz, makes these devices suitable for a range of RF linear and compressed amplifier circuits, including those for military communications systems, radar equipment (UHF, L-band, and S-band), and electronic warfare (EW) systems, as well as RF applications in the industrial, medical, and scientific (ISM) band. The CGHV40200PP is a 50-V unmatched GaN HEMT device rated for 250-W, 3.0-GHz operation with 67% efficiency (at PSAT) and 21-dB small-signal gain at 1.8 GHz. Wolfspeed, www.rsleads.com/712ee-221

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Title Annotation:EE PRODUCT PICKS
Publication:EE-Evaluation Engineering
Date:Dec 1, 2017
Words:218
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