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2000 IEEE MTT-S technical program. (Monday, June 9 - Thursday, June 12).



8:00 TO 9:10 AM


Chair: N. Camilleri * Co-chair: S. Lloyd

The 2005 RFIC Symposium technical program is formally opened with the Plenary Session. General Chair Natalino Camilleri will start off with opening remarks for this years' Symposium. Technical Program Chair Stephen Lloyd with highlight the technical program and announce the winners of the student paper contest. The heart of the plenary session is the three keynote speeches from industry executives on the future trends and direction of the wireless market. Dave Aldrich, CEO of Skyworks Solutions, with discuss the value of complete system solutions vs. traditional RFIC components. Ken Hansen, Vice President, Motorola Wireless and Broadband Systems Group, W.I.T.C., will discuss the current challenges placed on RFIC designers. Krishnamurthy Soumyanath, Director, Communications Circuit Research Intel Corporation, plans to cover the challenges of RF and mixed signal systems in sub-100nM technologies.

M01A-1: Migration Toward Complete System Solutions

D.J. Aldrich

M01A-2: Wireless RF Design Challenges

K. Hansen

M01A-3: RF and Mixed Signal Systems in Sub-100 nM Technologies: Challenges and Opportunities

K Soumyanath

10:10 TO 11:40 AM


Chair: Jyoti Mondal * Co-chair: Fazal Ali

This session focuses on both the system concept and measured performance of highly integrated receivers for 2G-3G4G applications. It covers multi-mode wireless terminal challenges, 4Gsystem concept, dual band tri-mode WCDMA/DCS RF receiver front ends with novel circuit topologies to reduce dc current. Both BiGMOS and CMOS implementations will be presented.

M01B-1: Multi-mode Wireless Terminals - Key Tecltnical Challenges

A. Loke, M. Abdelgany

M01B-2: The Impact of Emerging 4G Systems on the Performance and Complexity Requirements of RFICs

L. Lerson

M01B-3: Integrated Adaptive LO Leakage Cancellation for W-CDMA Direct Upconversion Transmitters

C. Lanschuetzer, A. Springer, L. Maurer, Z. Boos, R. Weigel

M01B-4: High Performance Low Current CDMA Receiver Front End Using 0.18 mm SiGe BiCMOS

M.P. Kamal, P Ye, Y. He, B. Agarwal, P. Good, S. Lloyd A. Loke

M01B-5: A SiGe WCDMA/DCS Dual-band RF Front-end Receiver

J.M. Hsu, Y.H. Chen, S.F Chen, M.C. Hno, PU. Su


Chair: Glenn Chang * Co-chair: Dave Lovelace

The papers in tins session cover transceiver IC and system architecture for multimode/multiband applications.

M02B-1: A Single-chip Transceiver for 802.11a and Hiperlan2 Wireless LANs

S. Pipilos, B. Metaxakis, A. Tzimas, S. Vlassis, S. Sgourenas, T. Varelas

M02B-2: 5 GHz and 2.4 GHz Dual-band RF Transceiver for WLAN 802.11a/b/g Applications

M. Zannoth, T. Ruehlicke, U Klepser, M. Punzenberger

M02B-3: A CMOS 802.11b Wireless LAN Transceiver

M02B-4: A Direct Conversion RF Front-end for 2 GHz WCDMA and 5.8 GHz WLAN Applications

X. Li, J. Paviol, B. Alyers, K O

M. Holli, J. Kaukovuori, J. Ryynanen, J. Jussila, K Halonen, K Kivekas

M02B-5: Low Power Phase Quantizing Demodulators for a Zero-IF Bluetooth Receiver

S. Samadian, A.A. Abidi, R. Hayashi


Chair: Kevin Kornegay * Co-chair: Derek K Shaeffer

The next frontier for optical communications systems lies at 40 Gb/s. These systems present unique design challenges due to the very high speed of operation. Papers presented in this session addresses issues related to critical system components, including multiplexers, demultiplexers, clock multipliers, trans-impedance amplifiers, and modulator drivers. Technologies include SiGe BiCMOS, InP PHEMT and INP HBT.

K. Kobayashi

M03B-1: State of The Art 40GB/s Transimpedance Amplifier with 3.6 KW of Gain and 50 GHz Bandwidth

M03B-2: SiGe 43.2 Gb/s 4:1 Multiplexor and Clock Multiplier for OC-768 Fiber Communications

G. Gutierrez, C. Bourde

M03B-3: 4 Bit Multiplexer/Demultiplexer Chip Set for 40 Gbit/s Optical Communication Systems

K. Ishii, H. Nosaka, M. Ida, K Kurishima, S. Yamahata, T. Enoki, T. Shibata, E. Sano

M03B-4: Compact High-gain Lumped Differential 40 Gb/s Driver Amplifiers in Production 0.15 mm PHEMT Technology.

Y. Baeyens, V. Houtsma, A. Leven, P. Roux, Y.K. Chen, P. Paschke, R. Hocke, S. Weisser

M03B-5: The Development of 40 Gb/s Limiting-distributed Modulator Drivers in InP HBTs

M. Yu, Z. Lao, S. Lee, V. Radisic, M. Xu, V. Ho, K . Guinn, K.G. Wang


Chair: Natalino Camilleri * Co-chair: Yann Deval

In this session high performance and novel VCOs in tire 1-10 GHz band are presented. All the VCOs in this session are developed using CMOS processes.

M04B-1: Performance Review of Integrated CMOS VCO Circuits for Wireless

M. Rachedine, D. Kaczman, A. Das, Al. Shah, J. Mondol, C. Shurboff

M04B-2: A First Digitally Controlled Oscillator in a Deep Submicron CMOS Process for Multi-GHz Wireless Applications

R.B. Slaszewski, D. Leipold, G.M. Hung, P. Balsara

M04B-3: Student Paper: Analysis on Resonator Coupling and its Application to CMOS Quadrature VCO at 8 GHz

D. Baek, T. Song, S. Ko, E. Yoon, S. Hong

M04B-4: Student Paper: A High Figure of Merit and Area Efficient Low Voltage (0.7-1V) 12 GHz CMOS VCO

T.K.K. Tsang, M.N. El-Gamal

M04B-5: Student Paper: High Performance SOI and Bulk CMOS 5 GHz VCOs

N. Weste, A. Adams, T.Y. Kim

1:20 TO 3:00 PM


Chair: Luciano Boglione * Co-chair: Vijay Nair

This session deals with several novel small signal circuits using CMOS, SiGe-BiCMOS as well as SOI. The capabilities of CMOS and SiGe amplifiers are shown up to 23 GHz. Circuit details on ESD protection and high frequency switched capacitor circuits are presented.

M01C-1: 23 GHz Front-end Circuits in SiGe BiCMOS Technology

Y. Li, M. Bao, Ericsson AB; Al. Ferndahl, Chalmers UA. Cathelin

M01C-2: Student Paper: A 0.6-22 GHz Bandwidth CMOS Distributed Amplifier

H. Wang, R.G. Liu

M01C-3: Student Paper: Highly Linear RF CMOS Amplifier and Mixer Adopting MOSFET Transconductance Linearization by Multiple Gated Transistors

T.W. Kim, B. Kim, K Lee

M01C-4: A Low-power UHF Differential LNA in 0.35 mm SOI CMOS

E. Zencir, T.H. Huang, N.S. Dogan, E. Arvas

M01C-5: A Novel LC-Tank ESD Protection Design for Gigahertz RF Circuits

M.D. Ker, C.I. Chou, C.M. Lee

M01C-6: Switched Capacitor Bandpass Filter Tuned by Ring VCO in CMOS 0.35 mm

J.M. Paillot, A. El Oualkadi, R. Allam, H. Guegnaud

M01C-7: Student Paper: A 1 V 2 GHz VISI CMOS Low Noise Amplifier

Y. Deval, T. Taris, J.B. Begueret, H. Lapuyade


Chair: Tina Quach * Co-chair: David Ngo

The first paper presents current status of power amplifiers for mobile handset protocols. The nest three papers describe novel design approaches for handset applications. The fifth paper shows a push-pull amplifier achieving more than 29 dBm covering tire IEEE 802.11a and HIPERLAN II bands. The last paper describes a power amplifier integrated with power control and T/R switch for Bluetooth applications.

M02C-1: Power Amplifiers for Mobile Phones

M02C-2: A Novel Power Amplifier Module for Quad-band Wireless Handset Applications

F. Ali

S. Zhang, P. Bretchko, Mokoro, R. McMorrow

M02G-3: Differential SiGe Power Amplifier for 3GPP WCDMA

P. Juurakko, V. Saari, J. Ryynanen, K. Halonen

M02C-4: Student Paper: Bias-switching Quasi-Doherty-type Amplifier for CDMA Handset

S. Bae, J. Kim, Y. Kon, I. Narn

M02G-5: A 1W Doubly Balanced 5GHz Flip-Chip SiGe Power Amplifier

N. Tanzi, Motorola Inc.

M02C-6: A CMOS Power Amplifier with Power Control and T/R Switch for 2.45 GHz Bluetooth/ISM Band Applications

P.B. Khannur


Chair: Aditya Gupta * Co-chair: Albert Wang

Four of the five papers in this session are concerned with active devices for Si RFICs and the last paper describes a high power, high efficiency GaN HEMT. The first paper describes a SiGe HBT with outstanding noise characteristics. This is followed by a paper on high power Si BJT for applications at C-band. The next paper discusses an RF LDMOS device suitable for wireless handsets integrated in a VLSI technology, followed by a paper on high frequency noise characteristics of RF MOSFETs in the sub-threshold region. The session concludes with a paper describing a high power, high efficiency GaN HEMT device.

M03C-1: Outstanding Noise Characteristics of SiGe: HBT Allow Flexibility in High Frequency RF Designs

F. Chai

M03G-2: A Silicon Bipolar Technology for High Efficiency Power Applications Up to C-band

T. Biondi, F Carrara, G. Palmisano, A. Scuderi

M03C-3: Robust and Performing RF LDMOS Device Integrated in a VLSI BCD Silicon Technology

L. Labate, A. Moscatelli, R. Stella

M03C-4: High Frequency Noise Characteristics of RF MOSFETs in Subthreshold Region

K.H. To, Y.B. Park, R. Thoma, W. Brown, M. Huang

M03C-5: High Power and High Efficiency AlGaN/GaN HEMT Operated at 50v Drain Bias Voltage

T. Kikkawa, M. Kanamura, K Joshin, M. Nagabara, N. Adachi, S. Yokokawa, S. Kato, M. Yokoyama, Y. Yamaguchi, N. Hara


Chair: D. Lovelace * Co-chair: D. Nobbe

Advanced architecture of frequency synthesizers in both CMOS and BiCMOS are presented.

M04C-1: A Fully-integrated Bluetooth Synthesizer Using Digital Pre-distortion for PLL-hased GFSK Modulation

B. Huff, D. Draskovic

M04C-2: A 3-bit 4th-order Sigma-Delta Modulator with Metal-connected Multipliers for Fractional-N Frequency Synthesizer

K.S. Lee, B.H. Park

M04C-3: Student Paper: A 16 mW, 2.23-2.45 GHz Fully Integrated PLL with Novel Prescaler and Loop Filter in 0.35mm CMOS

K. Shu, E. Sanchez-Sinencio, J. Silva-Martinez, S. Embabi

M04C-4: A 18mW Triple 2 0hz CMOS PLL for 30 Mobile Systems with -113 dBc/Hz GSM In-band Phase Noise and Dual-port GMSK Modulation

M. Guenais, S. Colomines, H. Beaulaton, P. Gortsse

M04C-5: Student Paper: A 10 mW, 4 GHz CMOS Phase-locked Loop with Dual-mode Tuning Technique and Partly-integrated Loop Filter

G. Konstanznig, R. Weigel

3:30 To 5:20 PM


Chair: Noriharu Suematsu * Co-chair: Albert Jerng

This session presents novel concepts for PA circuits. The first paper uses a base bias control circuit to achieve a high P1dB at low quiescent current at 5.8 0Hz. The second paper demonstrates a fully integrated distributed active transformer power amplifier in 0 > 18 [micro]m CMOS with a maximum output power of 2.8W at 1.9 GHz. The third paper is an invited paper that analyzes the origin of limit cycles in digitally controlled PA loops using the theory of describing functions. The next paper presents a 17 GHz ISM band linear output driver integrated in 0.12 [micro]m CMOS. The next paper is a fully integrated 1.9 GHz Class-E CMOS power amplifier with a maximum PAE of 70 percent. The final paper presents a new device configuration, the high voltage/high power FET.

M01D-1: High P1dB and Low Quiescent Current SiGe HBT Power Amplifier MMIC Using Self Base Bias Control Circuit for 5.8 GHz ETC Terminals

S. Shinjo, H.O. Ueda, T. Sugano, M. Nakanishi, N. Snematsu, M. Inoue

M01D-2: A Fully-integrated 1.8V, 2.8W, 1.9 GHz, CMOS Power Amplifier

A. Hajimiri, I. Aoki, S. Kee, D. Rutledge

M01D-3: The Origin and Suppression of Limit Cyles in Digitally Controlled RF PA Loops

P. Pratt

M01D-4: Student Paper: A 17 GHZ Linear 50 W Output Driver in 120 nm Standard CMOS

R. Thueringer, A. Scholtz, M. Tiebout, W. Simbuerger

M01D-5: Student Paper: A Fully Integrated Class-E CMOS Amplifier with a Class-F Driver Stage

Y.J. Chan, C.C. Ho

M01D-6: The High Voltage/High Power FET (HiVP)

A.K. Ezzeddine, H. Huang


Chair: Stefan Heinen * Co-chair: Reynold Kagiwada

The papers in this session are dealing with the silicon based frontend implementation for commercial systems. A focus is on IEEE 802.11a frontends in CMOS including LNAs and T/R switches. More over circuits for GSM am presented.

M02D-1: 5.7 GHz 0.18 mm CMOS Gain-controlled INA and Mixer for 802.11a WIAN Applications

H.R. Chuang, Y.K. Chu, C.H. Liao

M02D-2: Student Paper: A 5 GHz 56 dB Voltage Gain 0.18mm CMOS LNA with Built-in Tunable Channel Filter for Direct Conversion 802.11a Wireless LAN Receiver

H.Y. Tsui, J. Lau

M02D-3: A 0.8 dB Insertion-loss, 23 dB Isolation, 17.4 dBm Power-handling, 5 GHz Transmit/Receive CMOS Switch

T. Obnakado, S. Yamakawa, T. Murakami, A. Furukawa, K. Nishikawa, J. Tomisawa, Y. Yoneda, Y. Hashizume, K. Sugahara, T. Oomori, E. Taniguchi, H. Ueda, M. Ono, N. Suematsu

M02D-4: A High-Power-Handling GSM Switch IC with New Adaptive-Control-Voltage-Generator Circuit Scheme

K. Numata, Y. Takabashi, T. Maeda, H. Hida

M02D-5: A 1.4 mA & 3 mW, SiGe90, BiFET Low Noise Amplifier for Wireless Portable Applications

P. Ma, M. Racanelli, J. Zheng, M. Knight


Chair: Alan Westwick * Co-chair: Yuhua Cheng

Accurate modeling of chip inductors and effects of substrate coupling to circuitry are fundamental to effective design of RFICs, This session presents recent advances in modeling of inductors and circuit interaction due to the silicon substrate.

M03D-1: Student Paper: Experimental Results and Die Area Efficient Self-shielded On-chip Vertical Solenoid Inductors for Multi-GHz CMOS RFIC

H.Y. Tsui, J. Lau

M03D-2: Characterization and Modeling of the Substrate Noise and Its Impact on the Phase Noise of VCO

H. Liao, S.C. Rustagi

M03D-3: Student Paper: magPEEC: Extended Modeling for 3D Arbitrary Electromagnetic Devices with Application for M-cored Inductors

H. Long, Z. Feng, H. Feng, A. Wang

M03D-4: S-parameter Formulation of Quality Factor for a Spiral Inductor In Generalized Two Port Configuration

T.S. Horng, KC. Peng, J.K Jau, Y.S. Tsai

M03D-5: A Comprehensive Explanation on The High Quality Characteristics of Symmetrical Octagonal Spiral Inductor

O.B. Leong

M03D-6: Student Paper: Multilevel Approach for the Investigation of Substrate Parasitics in Mixed Signal ICs from Full-wave Analysis

W. Sidina, B. Henri, B. Damienne


Chair: Yann Deval * Co-chair: Stephen L. Lloyd

The Integration of high performance VCOs is becoming a requirement for most RFICs. This session covers SiGe VCOs in the 1025 GHa range as well as a highly programmable sigma-delta synthesizer.

M04D-1: Student Paper: 25 GHz Inductorless VCO in a 45 GHz SiGe Technology

N. Saniei, C. Andre, T. Salama, H. Djabanshahi

M04D-2: Student Paper: Optimization of SiGe VCOs for Wireless Applications

T. Johansen, L. Larson

M04D-3: Differential VCO and Frequency Tripler Using SiGe HBTs for the 24 GHz ISM Band

M. Danesh, F. Gruson, P. Abele, H. Schumacher

M04D-4: Student Paper: X Band BiCMOS SiGe 0.35 mm Voltage Controlled Oscillator in Parallel and Reflection Topology and External Phase Noise Improvement Solution

W. Wong, G. Cibiel, J.G. Tartarin, E. Tournier, R. Plana, O. Llopis

M04D-5: A Fast Settling, Low Phase Noise, Digitally Controlled 2.4 GHz CMOS 12-bit Sigma Delta Fractional-N Synthesizer with Programmable Step Sizes

R. Rana, A. Pale?


10:00 TO 11:40 AM


Chair: Stefan Heinen * Co-chair: Stephen L. Lloyd

Fully integrated VCOs and novel frequency synthesizers are presented which address applications in the 1-10 GHZ range. These papers demonstrate the high level performance and functionality possible in the low voltage CMOS process.

TU1B-1: Student Paper: A 1.8 V Monolithic CMOS Nested-loop Frequency Syntheizer for GSM Receivers at 1.8 GHz

R. Murji, J. Deen

TU1B-2: Student Paper: A New 6 GHz Fully Integrated Low Power Low Phase Noise CMOS LC Quadrature VCO

J.H. Chang, C.K Aim, Y.S. Youn, M.Y. Park

TU1B-3: Student Paper: Local Oscillator Generation Scheme in 0.18 mm CMOS for Low-IF and Direct Conversion Architectures

S. Dosanjb W. Kung, T. Manku C. Snyder

TU1B-4: An All Digital Frequency Locked Loop (ADFLL) with a Pulse Output Direct Digital Frequency Synthesizer (DDFS) and an Adaptive Phase Estimator

S.K. Islam, A. Gothandaraman

TU1B-5: A Low Power and Low Noise Frequency Synthesizer with Integrated Quadrature VcO

H.K. Yu, Y.S. Youn, M.Y. Park, S.H. Han


Chair: Jeffrey Ou * Co-chair: Louis Liu

This session presents several ICs and building blocks for optical systems using various technologies. The first paper presents a CDR based on an injection-locked oscillator in CMOS, followed by a 10 Gb/s CDR in SiGe BiCMOS. Then a BER tester IC in SiGe is presented. The last two papers present a distributed amplifier with a high-gain-bandwidth product (0. 1-40) GHz) in GaAs, and a 330Hz 2:1 frequency divider in SOI CMOS.

TU2B-1: An Innovative Open Loop CDR Based on Injection Locked Oscillator for High Speed Data Link Applications

J.B. Begueret, Y. Deval, C. Scarabello, J.Y. Le Gall, M. Pignol

TU2B-2: G. Marconi, Laboratori Fondazione

F. Centurelli, A. Golfarellim J. Guinea, L Masini, D. Morigi, M. Pozzoni, G. Scotti, A. Trifiletti

TU2B-3: A SiGe 10-Gb/s Multi-pattern Bit Error Rate Tester

R. Malasani, G. Gutierrez, C. Bourde

TU2B-4: The Novel High Gain and Broadband GaAs MMIC Distributed Amplifiers with Traveling-wave Gain Stages

T.W. Huang

TU2B-5: A 33GHz 2:1 Static Frequency Divider in 0.12 mm SOI CMOS Operable at 2.7 mW

J.O. Plouchart, J. Kim


Chair: Eli Reese * Co-chair: Mahesh Kumar

TU3B-1: Student Paper: 1.14 GHz Self-aligned Vibrating Micromechanical Disk Resonator

J. Wang, Z. Ren, C. Nguyen

TU3B-2: Characterizing and Optimizing High Q Inductors for RFIC Design in Silicon Processes

F.M. Rotella, P. Zampards D. Howara, M. Racanelli

TU3B-3: A Highly Efficient Noise Suppression Technique for si-based RFIC

T.S. Chen, C.Y. Lee, C.H. Kao, D.S. Deng, C.H. Wu, G.W. Huang, KM Chen

TU3B-4: Student Paper: A Systematic Study of ESD Protection Structures for RF ICs

A. Wang

TU3B-5: RF Modeling of Ball Grid Array Packages Using a Coupled Transmission Line Model

Y.L. Lai, C.L. Wu, K. Chiang, N. Chen


Chair: Patrick Murphy * Co-chair; Joe Staudinger

Continuing advances in semiconductor technologies necessitate more sophisticated modeling and measurement techniques. The session presents a number of recent significant advances in modeling small signal, non-linear, noise and reliability characteristics in MOSFETs and RFIC circuits.

TU4B-1: Student Paper: A Simple 4-port Parasitic Dc-embedding Methodology for High Frequency Characterization of SiGe HBTs

Q. Liang, J. Cressler, G. Niu

TU4B-2: Transient Analysis of Nonlinear Microwave Circuits Using Small-signal Scattering Parameters

P. Wang, V. Kaper, R. Shealy, E. Kan

TU4B-3: A Non-Quasi-Static Small-signal MOSFET Model for Radio and Microwave Frequencies Including Spreading Gate Resistances and Capacitances

W. Kordalski

TU4B-4: Broadband Small-signal Model and Parameter Extraction for Seep Sub-micron MOSFETs Valid up to 110 GHz

M.T. Yang, P.C. Ho, Y.J. Wang, T.J. Yeh, Y.T. Chia

TU4B-5: Student Paper: The Minimum Noise Figure and Mechanism as Scaling RF MOSFETs from 0.18 to 0.13 mm Technology Nodes

C.H. Huang, K.T. Chan, C.Y. Chen, A. Chin, G.W. Huang, G. Tseng, V. Liang, J.K. Chen

TU4B-6: Reliability Evaluation of Voltage Controlled Oscillators Based on a Device Degradation Sub-circuit Model

W.C. Lin, Y.C. King, L.J. Du


Chair: Jacques C. Rudell * Co-chair: Fazal Ali

This session surveys transceiver front-ends for 2 GHz and 3 GHz Cellular systems. Several prototypes transmitter and receiver architectures are presented and use a variety of novel techniques, such as active harmonic mixers, LO leakage cancellation and high dynamic range VGHA with accurate temperature compensation to enhance the overall front-end performance. In addition, transceiver features such as multi-mode connectivity are reviewed in this session.

TU1C-1: A Complete GSM/GPRS/E-GPRS Radio System

B. Wilkins

TU1C-2: Architecture and Performance Overview of a Highly Integrated 13 x 13 mm Single-package Radio (SPR) Module for Dualband EGSM900/DCS1800 Applications

E. Ngompe, W. Domino, N. Vakilian, M. Megahed

TU1C-3: A Dual-band Tri-mode CDMA IF Receiver with Programmable Channel-match Filter

J. Cho, P. Good, E. McCarthy, E. Truong, Y. He, D. Yates, G. Taskov, G.H. Lee, D. Koh, S. Lloyd, M. Kamat, K. Rampmeier, W. Cops, A. El Moznine

TU1C-4: Fully Differential Direct Conversion Receiver for W-CDMA Using an Active Harmonic Mixer

H. Yoshida

TUIC-5: W-CDMA 1 Chip SiGe TX-IC with High Dynamic Range and Accurate Temperature Compensation VGA

H. Nakamizo, T. Ueda, K. Ninomiya, Y. Takahashi, Y Matsunami, H. Joba, K. Itob, D. Malbi, D. Wang


Chair: Dan Nobbe * Co-chair: Kirk Ashby

This session focuses on mixer designed primarily for cellular, PCS, and W-CDMA applications up to 2.1 GHz. The designs are constructed in a variety of technologies including GaAs HBT, 0.12 [micro]m CMOS, SiGe BiCMOS, and SOS. The designs include a CDMA up converter with class A/B bias, a GSM IQ modulator meeting the GSM noise requirements in bulk CMOS, a W-CDMA iF modulator with gain control, a W-CDMA mixer with 3rd order IM cancellation techniques, and a high linearity resistive CMOS mixer.

TU2C-1: Highly Linear Upconverter MMIC Designs with Complete Package and Test Board Effects for CDMA Applications

J.M. Wu, J.K. Jau, T.S. Horng, C.C Tu

TU2C-2: A Low Noise Vectormodulator with Integrated Basebandfilter in 120 nm CMOS Technology

M. Simon

TU2C-3: High Linearity, Low Noise IF Transmitter for WCDMA Application

P. Filoramo, A. Granala, T. Chiarillo, P. Aliberti, G. Scuderi, P. De Vita, S. Cosentino

TU2C-4: Student Paper: A Si/SiGe BiCMOS Mixer with Third Order Nonlinearity Cancellation for WCDMA Applications

L. Sheng, L. Larson

TU2C-5: High Linearity CMOS SOI Mixer

D. Lovelace, D. Losser, D. Kelly


Chair: Jenshan Lin * Co-chair: Bernard Xavier

The papers in this session cover various circuits for wireless data applications.

TU3C-1: A CMOS Dual Band Tri-mode Chipset for IEEE 802.11a/b/g Wireless IAN

S. Mehta, S. Mehta, M. Zargari, S. Jen, B. Kaczynski, M. Lee, M. Mack, S. Mendis, K. Onodera, H. Samavati, W. Si, K. Singh, E. Terrovitis, D. Weber, D. Su

TU3C-2: An RF CMOS Transmitter Integrating a Power Amplifier and a Transmit/Receive Switch for 802.11b Wireless Local Area Network Applications

R. Point, Z. Li, W. Foley, B. Ingersoll, J. Borelli, D. Segarra, D. Donoghue, C. Liss, M. Mendes, J. Feigin, A. Georgiadis, M. Valery, E. Dawe, D. Losanno, R. Quintal, M. Nikitin, R. Jabor, M. Morin, K. O, G. Dawe

TU3C-3: 5-6 GHz Monolithically Integrated Calibratable Low Noise Downconverter for Smart Antenna Arrays

T. Brauner, R. Vogt, W. Bachtold

TU3C-4: A Fully Integrated Variable Gain 5.75 GHz LNA with on Chip Active Balun for WLAN

M.K. Raja, T.C.B. Terry, N. Kumar, W.S. Jau

TU3C-5: Student Paper: A 4.9mW 270 MHz CMOS Frequency Synthesizer/FSK Modulator

H. Choi, S. Shin, Y. Ku, K. Lee, M.Jeong

3:30 TO 5:00 PM


Chair: Kirk Ashby * Co-chair: Dan Nobbe

This session includes mixers designed for cable modern and W-LAN applications as well as a 17 GHz direct down converter and a novel CMOS body effect mixer. The designs are fabricated In SiGe HBT, 46 GHz silicon bipolar, 0.18 [micro]m CMOS and SiGe BiCOMOS process technologies.

TU1D-1: A Broadband Upconverter Unit for a Cable Modern Double Conversion Receiver

K. Stadius, A. Malinen, K. Halonen, P. Paatsila

TU1D-2: A 5 GHz Monolithic Silicon Bipolar Down-converter with a 3.2 dB Noise Figure

A. Italia, E. Ragonese, G. Palmisano, G. Girlando

TU1D-3: A High Performance Low Power CMOS Double Balanced IQ Down Conversion Mixer for 2.45 GHz ISM Band Applications

C.G. Tan

TU1D-4: A 17 GHz Direct Down-conversion Mixer in a 47 GHz SiGe BiCMOS Process

M.W. Lynch

TU1D-5: Student Paper: A Differential Implementation of the CMOS Active-load Body-Effect Mixer

Y. Deval, T. Taris, J.B. Begueret, H. Lapuyade


Chair: Yann Deval * Co-chair: Natalino Camilleri

Three dividers and two frequency generation devices are presented, highlighting the multi-GHz capability of silicon technology.

TU2D-1: A High Speed Dual Modulus Divider in SOI CMOS with Stacked Current Steering Phase Selection Architecture

K. Mistry, W. Redman-White, J. Benson, N. D'Halleweyn

TU2D-2: A 2.4 GHz Dual-modulus Divide-by-127/128 Prescaler in 0.35 mm CMOS Technology

R. Rana, C. Zhang

TU2D-3: A 17 GHz Dual-modulus Prescaler in 120 mm CMOS

H.D. Woblmuth, W. Simbuerger, D. Kebrer, R. Thueringer

TU2D-4: A 5.84 GHz Tunable SAW Oscillator with Frequency Doubler for a DSRC System

J. Steinkamp, F. Henkel

TU2D-5: Monolithic Millimeter-wave Frequency Tripler Using a 0.35 nun BiCMOs SiGe Technology

A. Coustou, D. Dubuc, G. Cibiel, J. Graffeuil, E. Tournier, O. Llopis, R. Plana, I. Telliez, C. Boulanger


Chair: Gregory Lyons * Co-chair: Roger Kaul

The FCC issued a Report & Order in February 2002 outlining specifications for approval of ultra-wideband (UWB) systems, including communications and measurement systems, vehicular radar systems, and imaging systems. Emission masks have been defined in the frequency domain for each system class, In addition to Part 15 emission limitations. Commercial products have been recently announced satisfying these FCC requirements. It is expected that by mid-decade UWB chips will appear in laptop computers and UWB radars will appear in automobiles. The papers in this session highlight emerging commercial applications for UWB communications, expected to enable wireless streaming video and high-data rate personal area networks (PANs): UWB automobile radars, expected to provide short range 360-degree situational-awareness sensing for automobiles: and 60 GHz gigabit-Ethernet-links.

TU4D-1: Ultrawideband: The Next Step in Short Range Wireless

D.G. Leeper

TU4D-2: Challenges for Ultra-wideband (UWB) CMOS Integration

R. Aiello

TU4D-3: UWB Path Loss Characterization in Residential Environments

S. Ghassemzadeb, V. Tarokh

TU4D-4: Ultra Wide Band 24 GHz Automotive Radar Front-end

I. Gresham, A. Jenkins, J.P.T. Lanteri

TU4D-5: 1.25 Gbps Wireless Gigabit Ethernet Link at 60 GHz Band

K. Ohata, K. Maruhashi, M. Ilo, S. Kishimolo, K. Ikuina, T. Hashiguchi, K. Ikeda, N. Takahashi






7:00 AM TO 4:00 PM


7:00 To 8:00 AM


7:00 TO 8:00 AM


8:00 TO 9:45 AM


9:45 TO 10:30 AM


10:30 AM TO 12:00 PM


12:00 TO 1:15 PM


1:15 TO 3:00 PM


3:00 TO 3:45 PM


3:45 TO 5:00 PM




10:00 AM TO 2:00 PM

Eliminate Calibration Problems at Millimeter Frequencies with SBSC (Slide Back Sex Change) Connectors, Tom H. Roberts; Using DIVA to Discover the True RF Characteristic of Semiconductor Devices, Graham J. Riley; The Infinity Probe for On-wafer Device Characterization and Modeling to 110 GHz, Tariq Alam; Dedicated On-wafer Load Pull Tuner System, OWTS, Christos Tsironis; Multimode Tuner Systems for Load Pull Offering High Speed and Accuracy and High VSWR, Surinder Bali, Gary Simpson; Testing Telematics Antennas, Donald G. Bodnar, On-line Control of Power Amplifier via Ethernet Interface, Thomas Mullineaux; The New Face of Digital RF Signal Generators, Steve Rudd; WaveCor - A Dynamic Approach to Synthesizer Design, Jonathan Dixon

2:00 TO 4:00 PM

3 kW Linear Amplifier for Next Generation IFF Systems, Stan Mussynski, Joe rock, Jerry Rolling, Doug Macheel; 30 Watt Surface-Mount Power Amplifiers for DCS, PCS and UMTS Applications, E. James Crescenzi, Jr.; Ultra Broadband and High Linear Efficiency GOLDMOS7 Products for 3G Basestation Applications, Tim Ballard, Qiang Chen, Nagaraj Dixit, Gordon Ma, Prasanth Perugupali, Mikael Zackrisson; Advanced MMICs for Automotive, Telecom, Space and Defence Applications, Kalus Beilenhoff, Pierre Quentin, Marc Camiade, Gerard Delaval, Philippe Labasse; A New Low Cost Rapid Delivery Platform for Configurable Microwave Subsystems and Switching, Gary Carlson, Mark M. Minot; Ultra-low Phase Noise Opto-electronic Oscillators at Tunable and Fixed Frequencies, Danny Elivahu; Advances in Linearizer Design, Allen Katz; PDA Digital Photograph Transfer Using Honeywell Single Chip Radio, Tom Romanko


9:20 AM TO 2:40 PM

Mode-matching Programs for Accurate Component Modeling, P.R. Foster, Soe Min Tun; APLAC Circuit Simulator and Design Tool Land Implementation of Multivariate Steady State Time Domain (MSSTD) Analysis in APLAC, Olli Pekonen; Reducing RF and Enterprise PCB Design Cycle Time with Microwave Office, Michael C. Heimlich, Robert O'Rourke; Neural Based Microwave Modeling and Design, Q.J. Zhang; CST Design Studio with CST Microwave Studio for Large Component Design, Jim Reed; Eliminate Costly Design Turns Using Good RF Architecture Tools, Rulon VanDyke; uWave Wizard -- The Multi-purpose Tool for Passive Components Design, Thomas Krauss, Tomas Sieverding: WASP-NET -- Fast Hybrid MM/FE/Mom/FD CAD and Optimization Tool -- New Advances in Filter, Passive Component and Antenna Design, Fritz Amdt; Substrate-scalable Model for Efficient Microwave Design, Tom Weller and Larry Dunleavy; What's New in QuickWave Software? Malgorzata Celuch; Parallel Processing in the Analyst[TM] Product: Scalability in Interoffice Networks, John F. DeFord, Ben Held: Adaptive and Distributed Electromagnetic Simulation and Synthesis on IE3D 10.0. Jian-X. Zheng; Artificial Intelligence Applications in the Design of Microwave Components, John R. Sanford, Improving the Design Efficiency of Wireless Equipment Through the Interconnection of EDA Software and Test Equipment, Gregory L. Amorese

2:40 TO 5:00 PM

High Volume, High Performance GaAs Power FET Products for Broadband Wireless Internet Access, Ramesh K. Gupta; Utilization of InGaP/GaAs HBT Technology for Wireless and Mobile Applications, Peter Hartshorn; Junction Ferrite Devices, Circulators and Isolators, Tony Edridge; Analysis of Intermodulation Distortion in Ferrite Circulators, Anuj Srivastava, Karen Kocharyan; New ASIC-based Precision TCVCXO for GPS and SONET Systems, Nigel Hardy, Mel Berman; Vibration Effects on Crystal Controlled Oscillators and Crystal Filters, Kenneth L. Jensen; How Various Flexible Cable Constructions Handle Medium to High Flexure Usage, Stan Hardin


9:40 AM TO 12:00 PM

Higher Performance LDMOS Packaging, Kouren Jouldjian, Josh Lobsinger; A High Frequency, High Power SMT, MMMIC Package Built Using Low Temperature Co-fired Ceramics on Metal (LTCC-M), Joe Mazzochette; Design and Manufacturing of Integrated Modujles for Wireless and RF Applications Using Multi-Mix[R] Microtechnology and Green Tape[TM] LTCC Materials, James J. Logothetis, Daniel I. Amey, Timothy P. Mobley, LTC and Core and Wire Triple Balanced Mixers, Daxiong Ji, Radha Setty; Wire bonding and Soldering to LTCC Metalization, Edward Liand, Baymond Brown; Packaging and Assembly Made Simple with Vapor Deposited Eutectic Solders, John B. Snook; Complete Thin Film Passive Solution, Tom Lavallee
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Publication:Microwave Journal
Date:May 1, 2003
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