WJ Communications Reveals 15 New RF Semiconductors at MTT-S Symposium; Expanded Portfolio Leverages Low Cost, High Performance and Reliability.

Business Editors/High-Tech Writers

2002 IEEE MTT-S International Microwave Symposium

SAN JOSE, Calif.--(BUSINESS WIRE)--May 30, 2002

WJ Communications, Inc (Nasdaq:WJCI), a leading designer and supplier of high-performance RF semiconductors and multi-chip modules, announced today that it will introduce 15 new products -- low-cost gain blocks, cell band MMIC mixers, HFETs and dual- & single-branch downconverters -- at the 2002 IEEE MTT-S International Microwave Symposium, held in Seattle, WA June 4-6. The performance and quality of these products make them attractive to the major telecommunications OEMs. Product information and literature will be available at WJ's booth (# 2001).

"With these new products, we continue to deliver on our promise to bring to market leading-edge RF semiconductors enabling higher levels of performance and integration required by 2.5 and 3G wireless infrastructure systems," said Skip Hoover, Executive Vice President of WJ Communications. "For example, our new CV products utilize a multi-chip module design to significantly reduce the cost, power consumption and board space required to meet the RF demands of next generation base stations. Additionally, our new low-cost gain blocks marry new process technology with superior RF designs to provide WJ's industry-leading quality at compelling price points. These products expand our semiconductor product line and are evidence of our progress in becoming a premier supplier of RF semiconductors for wireless infrastructure worldwide."

Dual- and Single-Branch Downconverters: WJ's new line of multi-chip modules (MCMs) consists of six separate products. The CV210-1, CV211-1, and CV211-2 are dual-branch converters, and the CV110-1, CV111-1, and CV111-2 are single-branch converters all in 6 x 6 mm QFN packages. This product family is intended to meet the performance, functionality, and cost goals for current and next generation mobile infrastructure basestations. Combining WJ's integration and process technology allows performance optimization for low noise figure and high-linearity in a low-side LO downconverting application: 12.5 dB noise figure and +35 dBm OIP3. An LO driver is included for operation directly from from the synthesizer. The initial CV products are targeted for transceiver basestations in the 900 & 1900 MHz and UMTS frequency bands.

Low-Cost Gain Blocks: This new InGaP HBT amplifier product line of low-cost gain blocks is packaged in various industry standard surface mount packages: SOT-89, SOT-86 and SOT-363. The AG amplifiers consist of Darlington pair amplifiers designed to provide broadband gain at frequencies from DC to 3000 MHz. This product family spans a variety of performance combinations: 10 to 20 dB gain, +7 to +24 dBm P1dB, and +20 to +41 dBm OIP3. These high-quality designs maintain MTBF values greater than 100 years at mounting temperatures of +85(degree)C. They are targeted at telecommunication infrastructure and CATV markets and can be directly applied to various current and next generation wireless technologies such as GSM, CDMA, W-CDMA, UMTS and GRPS.

Cell Band MMIC Mixers: These three new MMIC mixers operate at cellular frequencies in either high-side or low-side LO configurations: MH203, MH204, and MH205. These devices operate over the 800 to 960 MHz frequency range with 70-120 and 300 to 350 MHz IF frequency ranges. With an LO power of +17 dBm they achieve 9 dB conversion loss, 30 dBm IIP3, L-R isolation of 25 dB and L-I isolation of 35 dB. The new MMIC mixers are packaged in industry standard SOIC-8(A).

HFETs: The FP1189 and FP2189 operate from 50-4000 MHz and provide P1dB power levels of up to 0.5 W and 1 W respectively. Typically, the FP1189 provides 17 dB gain with +28 dBm P1dB and +40 dBm IP3; and the FP2189 provides 15dB gain with +31 dBm P1dB and +46 dBm IP3. The FP1189 works optimally at a drain bias of +8V with 100 mA of quiescent current, while the FP2189 ideally operates at a drain bias of +8V and 250 mA. The low-cost, SOT-89, SMT package is optimized to offer excellent thermal efficiency with 100 year MTBF's calculated at +85(degree)C operating temperatures. The fact that these devices achieve 50% efficiency, make them ideal for a multitude of driver amplifier applications in wireless transmission systems.

Availability

Pricing and availability information will be available at the WJ's Booth (#2001) or can be requested directly from WJ's website (www.wj.com).

About WJ Communications

WJ Communications Inc. is a leading RF semiconductor company focusing on the design and manufacture of high-quality devices and multi-chip modules (MCMs) for telecommunications systems worldwide. WJ's highly reliable amplifier, mixer, RF IC and MCM products are used to transmit and receive signals that enable current and next generation wireless and wireline services. For more information visit www.wj.com or call 408/577-6200.

Safe Harbor Statement under the Private Securities Litigation Reform Act of 1995:

This press release contains forward-looking statements including financial projections, statements as to the plans and objectives of management for future operations, and statements as to the Company's future economic performance, financial condition or results of operations. These forward-looking statements are not historical facts but rather are based on current expectations and our beliefs. The Company's actual results may differ materially from those projected in these forward-looking statements as a result of a number of factors including those described from time to time in the Company's filings with the Securities and Exchange Commission. Readers of this release are cautioned not to place undue reliance on these forward-looking statements. The Company undertakes no obligation to publicly update or revise the forward-looking statements contained herein to reflect changed events or circumstances after the date of this press release.

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