WJ Communications New HBT Amplifier Family Targets Medium Power Market; Five New Models for Wireless Transceiver Line Cards & RF Power Amplifiers.Business Editors/High-Tech Writers SAN JOSE San Jose, city, United States San Jose (sănəzā`, săn hōzā`), city (1990 pop. 782,248), seat of Santa Clara co., W central Calif.; founded 1777, inc. 1850. , Calif.--(BUSINESS WIRE)--May 19, 2003 WJ Communications, Inc. (Nasdaq:WJCI WJCI WJ Communications, Inc ), a leading designer and supplier of high-performance RF semiconductors and multi-chip modules, today introduced a new family of indium gallium phosphide Indium gallium phosphide (InGaP) is a semiconductor composed of indium, gallium and phosphorus. It is used in high-power and high-frequency electronics because of its superior electron velocity with respect to the more common semiconductors silicon and gallium arsenide. (InGaP) hetero-junction bipolar transistor (electronics) bipolar transistor - A transistor made from a sandwich of n- and p-type semiconductor material: either npn or pnp. The middle section is known as the "base" and the other two as the "collector" and "emitter". (HBT HBT Heterojunction Bipolar Transistor HBT HyCult Biotechnology (Uden, The Netherlands) HBT Hanbury-Brown-Twiss (interferometer) HBT Herring Bone Twill HBT Heflex Bioengineering Test ) medium power driver amplifiers. These five new amplifiers -- AH110, AH115, AH116, AH215 and AH312 -- span the 1/4 to 2 watt output power range and are ideal driver amplifiers in wireless infrastructure applications like high-power amplifiers in wireless base stations. WJ's InGaP HBT technology provides outstanding linearity and power efficiency over a broad operating range. "The launch of this new line of amplifiers is an important entry point for WJ into the medium to high power RF amplifier market," stated Richard Woodburn, director, semiconductor product line management. "The efficiency, gain and linearity of these amplifiers make them excellent candidates for transceiver line card and RF power amplifier An RF power amplifier is a type of electronic amplifier used to convert a low-power radio-frequency signal into a larger signal of significant power, typically for driving the antenna of a transmitter. applications in current and next generation multi-carrier base stations where WJ's high standards for product quality and reliability provide maximum value." Technology Overview These InGaP HBT amplifiers have output power levels (P1dB) ranging from 1/4 - 2 watts. These devices deliver high output powers while meeting the system-critical ACPR ACPR Adjacent Channel Power Ratio ACPR Ariel Center for Policy Research (Israel) ACPR Adjacent-Channel Power Rejection ACPR Adjacent Channel Protection Ratio ACPR American Crossbred Pony Registry ACPR Advanced Core Performance Reactor performance requirements: at any given output power these amplifiers will maintain excellent adjacent and alternate channel power rejection levels. These highly linear amplifiers are capable of running class A/B A/B Airborne A/B Afterburner (jet engines) A/B Air Blast A/B Answerback A/B Auto-brake A/B Air Bus A/B Afterburning for better efficiency while covering frequencies from 400 MHz (MegaHertZ) One million cycles per second. It is used to measure the transmission speed of electronic devices, including channels, buses and the computer's internal clock. A one-megahertz clock (1 MHz) means some number of bits (16, 32, 64, etc. to 2300 MHz. All five models operate directly off a single positive voltage bias and are packaged in low-cost, thermally efficient SMT (1) (Surface Mount Technology) See surface mount. (2) (Station ManagemenT) An FDDI network management protocol that provides direct management. Only one node requires the software. SMT - Station Management SOT-89 and SOIC-8 packages.
InGaP HBT Amplifiers
Note: Performance specifications are in the recommended application
circuit
Noise
Model Frequency P1dB OIP3 Gain Figure
Number (MHz) (dBm) (dBm) (dB) (dB)
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AH110 50-2000 +23 +39 20.5 5.0
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AH115 1800-2300 +28 +43 15.0 5.0
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AH116 800-1000 +28 +42 18.0 7.0
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AH215 400-2300 +31 +46 17.0 6.0
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AH312 400-2300 +33 +49 18.0 8.0
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IS-95
Channel Device
Model Power Bias Package
Number (ACPR) (V/mA) Style
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AH110 +13 (-60 dBc) +8/100 SOT-89
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AH115 +16 (-65 dBc) +5/250 SOIC-8
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AH116 +16 (-65 dBc) +5/250 SOIC-8
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AH215 +21 (-60 dBc) +5/450 SOIC-8
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AH312 +22 (-65 dBc) +5/800 SOIC-8
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Price & Availability Loose part samples and connectorized evaluation boards for all five models are available now. Samples and production pricing information can be requested directly from the WJ website (www.wj.com). About WJ Communications WJ Communications Inc. is a leading RF semiconductor company focusing on the design and manufacture of high-quality devices and multi-chip modules (MCMs) for telecommunications systems worldwide. WJ's highly reliable amplifier, mixer, RF IC and MCM (MultiChip Module or MicroChip Module) A chip package that contains several bare chips mounted close together on a substrate (base) of some kind. products are used to transmit and receive signals that enable current and next generation wireless and wireline services. For more information visit www.wj.com or call 408/577-6200. Safe Harbor Safe Harbor 1. A legal provision to reduce or eliminate liability as long as good faith is demonstrated. 2. A form of shark repellent implemented by a target company acquiring a business that is so poorly regulated that the target itself is less attractive. Statement under the Private Securities Litigation Reform Act The Private Securities Litigation Reform Act of 1995 (PSLRA) implemented several significant substantive changes affecting certain cases brought under the federal securities laws, including changes related to pleading, discovery, liability, class representation and awards fees and of 1995: This press release contains forward-looking statements including financial projections, statements as to the plans and objectives of management for future operations, and statements as to the Company's future economic performance, financial condition or results of operations. These forward-looking statements are not historical facts but rather are based on current expectations and our beliefs. The Company's actual results may differ materially from those projected in these forward-looking statements as a result of a number of factors including those described from time to time in the Company's filings with the Securities and Exchange Commission. Readers of this release are cautioned not to place undue reliance on these forward-looking statements. The Company undertakes no obligation to publicly update or revise the forward-looking statements contained herein to reflect changed events or circumstances after the date of this press release. |
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