UltraRF Unveils 90 Watt LDMOS RF Power Transistor for UMTS; UPF21090 Features Industry Standard Matching and Gold Reliability.

Business Editors

Wireless Symposium/Portable by Design

SAN JOSE, Calif.--(BUSINESS WIRE)--Feb. 13, 2001

UltraRF, Inc., a leader in manufacturing high-power, high-performance laterally diffused metal oxide silicon (LDMOS) RF power semiconductors for the wireless industry, today announces its UPF21090 discrete RF power transistor.

The UPF21090 UltraGOLDII(TM) LDMOS product is specifically designed for UMTS base station applications in the 2.1 GHz to 2.2 GHz band. It is ideal for high power wideband CDMA RF power amplifiers in Class A or Class AB operation.

The UPF21090 transistor operates at 28V with a broadband RF output power rating of 90 watts. Fabricated with the proprietary UltraRF UltraGOLDII(TM) LDMOS technology, the discrete transistor features a high level of performance, industry standard packaging and an all-gold metal system for high reliability.

UltraRF Debuts LDMOS RF Power Transistor

The UPF21090 RF power transistor, with its rugged performance, is a suggested replacement for Motorola part number MRF21090. The device has compatible source and load impedance and can be dropped into existing power amplifier designs with little or no circuit matching changes.

The UPF21090 industry standard discrete power transistor is available in production quantities now. The UPF21090 is the latest addition to the range of industry standard second source LDMOS devices from UltraRF.

"The UPF21090 with its high linearity is targeted for UMTS base station applications. The power transistor is internally matched to simplify amplifier design and facilitate repeatable manufacturing, and complements our broad range of Infrastructure RF power devices." stated John Quinn, UltraRF vice president.

UltraRF designs, manufactures and markets a complete line of high-quality, customizable and cost-effective radio frequency (RF) power semiconductors, the critical component utilized in building wireless power amplifiers for cellular infrastructure systems. Renowned for world class bipolar and LDMOS products, UltraRF has added silicon carbide advanced technology transistors to address the demand for the next generation of wireless infrastructure RF power amplifiers.

UltraRF operates a technologically advanced fabrication facility. The company designs and manufactures laterally diffused metal-oxide silicon (LDMOS) and bipolar power semiconductors with frequency beyond 2.4 GHz. UltraRF's principal offices are at 160 Gibraltar Court, Sunnyvale, CA. 94089. For more information, visit the UltraRF Web site at www.ultrarf.com or call 408/745-5700.

UltraRF, Inc. is a wholly-owned subsidiary of Cree, Inc. Cree develops and manufactures semiconductor materials and devices based on SiC, GaN and related compounds. The company's products include blue and green LEDs, RF power transistors for use in wireless infrastructure applications, SiC crystals used in the production of unique gemstones and SiC wafers sold for use in research and development. Cree has new product initiatives based on its experience in SiC and GaN-based semiconductors, including blue laser diodes for optical storage applications, high frequency microwave devices for radar and other communication systems, and power devices for power conditioning and switching. For more information on Cree, visit http://www.cree.com.

This press release contains forward-looking statements involving risks and uncertainties that may cause actual results to differ materially from those indicated. Actual results could differ due to a number of factors, including the risk we may encounter delays or other difficulties in ramping up production of the new products and increased costs as a result; the possibility we will be unable to manufacture the products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the potential lack of customer acceptance of the products; the rapid development of new technology and competing products that may impair demand; and other factors discussed in Cree's filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 25, 2000 and subsequent quarterly reports.

--30--DS/ph*

###

CONTACT: UltraRF

Sheryle Henson, 408/745-5731

[e-mail]

or

McQUERTERGROUP

Jane Bryant, 703/654-6060

[e-mail]

KEYWORD: CALIFORNIA

INDUSTRY KEYWORD: COMPUTERS/ELECTRONICS HARDWARE NETWORKING TELECOMMUNICATIONS TRADESHOW