UltraRF UPF19060 RF Power Transistor Available Now; UltraGOLD Product Features Gold Reliability.

Business Editors/Hi-Tech Writers

SUNNYVALE, Calif.--(BUSINESS WIRE)--Feb. 26, 2001

Responding to the rapid expansion of cellular and PCS infrastructure, and the need for high-volume production RF power transistors, UltraRF Inc., a wholly owned subsidiary of Cree Inc. (Nasdaq: CREE), today announced its UPF19060 discrete RF power transistor targeted to meet wireless infrastructure requirements.

The UPF19060 UltraGOLD(TM) laterally diffused metal oxide silicon (LDMOS) transistor features industry standard matching to simplify amplifier design and facilitate repeatable manufacturing. It is a suggested drop-in replacement for Motorola MRF19060.

The RF power transistor is designed to operate as a Class A or Class AB high-power linear amplifier in PCS and GSM base station applications, operating in the 1930 MHz to 1990 MHz band.

The UPF19060 transistor operates at 26V with an RF output power rating of 60 watts. Fabricated with the proprietary UltraRF UltraGOLD(TM) LDMOS technology, the discrete transistor features a high level of performance, industry standard packaging and a demonstrated median time to failure (MTTF) of approximately 20 years, based on industry standard accelerated life testing.

The UPF19060 industry standard discrete power transistor, the latest addition to the range of industry standard second-source LDMOS devices from UltraRF, is now available in production quantities.

As a leader in manufacturing high-power, high-performance LDMOS RF power semiconductors for the wireless industry, UltraRF is committed to helping the wireless industry to meet its expeditious deployment schedules.

"Our core UltraGOLD(TM) die has been shipped in high-volume for several years. We are proud of our quick time to market with our LDMOS product line and our new family of industry standard products for 2001," stated John Quinn, UltraRF vice president.

UltraRF designs, manufactures and markets a complete line of high-quality, customizable and cost-effective radio frequency (RF) power semiconductors, the critical component utilized in building wireless power amplifiers for cellular infrastructure systems.

Renowned for world class bipolar and LDMOS products, UltraRF has added silicon carbide advanced technology transistors to address the demand for the next generation of wireless infrastructure RF power amplifiers.

UltraRF operates a technologically advanced fabrication facility. The company designs and manufactures LDMOS and bipolar power semiconductors for operation up to 2.4 GHz. UltraRF's principal offices are at 160 Gibraltar Court, Sunnyvale, Calif. 94089. For more information, visit the UltraRF Web site at www.ultrarf.com or call 408-745-5700.

UltraRF Inc. is a wholly owned subsidiary of Cree Inc., which develops and manufactures semiconductor materials and devices based on SiC, GaN and related compounds.

The company's products include blue and green LEDs, RF power transistors for use in wireless infrastructure applications, SiC crystals used in the production of unique gemstones and SiC wafers sold for use in research and development.

Cree has new product initiatives based on its experience in SiC- and GaN-based semiconductors, including blue laser diodes for optical storage applications, high- frequency microwave devices for radar and other communication systems, and power devices for power conditioning and switching. For more information on Cree, visit www.cree.com.

This press release contains forward-looking statements involving risks and uncertainties that may cause actual results to differ materially from those indicated.

Actual results could differ due to a number of factors, including the risk we may encounter delays or other difficulties in ramping up production of the new products and increased costs as a result; the possibility we will be unable to manufacture the products with sufficiently low cost to offer them at competitive prices or with acceptable margins; the possibility that transistors may not achieve the median estimated lifespan achieved in testing; the potential lack of customer acceptance of the products; the rapid development of new technology and competing products that may impair demand; and other factors discussed in Cree's filings with the Securities and Exchange Commission, including its report on Form 10-K for the year ended June 25, 2000 and subsequent quarterly reports.