Ultra clean processing of semiconductor surfaces 8; proceedings.9783908451464
Ultra clean processing of semiconductor surfaces 8; proceedings.
International Symposium on Ultra Clean Processing of Silicon Surfaces (8th: 2006: Antwerp, Belgium) Ed. by Paul Mertens et al.
Trans Tech Publications
Solid state phenomena; v.92
Papers from a September 2006 conference, 86 in all, cover all aspects of the use of ultra-clean technology for large-scale integration of semiconductors, and cleaning and contamination-control in both front- end-of-line (FEOL FEOL Front End Of Line (semiconductor manufacturing) ) and back-end-of-line (BEOL BEOL Back-End-Of-Line
BEOL Bent's Old Fort National Historic Site (La Junta, Colorado)
BEOL Bent's Old Fort National Historic Site (US National Park Service) ) processing. Papers are in sections on SiO2 removal and drying, surface chemistry of Si and Ge, FEOL selective wet etching In microfabrication, wet etching is chemical etching performed with a liquid etchant, as opposed to a plasma. See also Etching (microfabrication). and corrosion, FEOL photo-resist removal and substrate loss, particle removal and damage, contamination control Procedures to avoid, reduce, remove, or render harmless (temporarily or permanently) nuclear, biological, and chemical contamination for the purpose of maintaining or enhancing the efficient conduct of military operations. , metrology, post-CMP cleaning, and BEOL and contact cleaning. Specific topics examined include surface preparation challenges on nitride gate oxides, all-wet stripping of FEOL photoresist using mixtures of sulphuric acid sulphuric acid: see sulfuric acid. , effects of dopants on the dissolution behavior of silicon substrates in HF-based cleaning solutions, and modeling of shock wave emission during acoustically-driven cavitation-induced cleaning processes. The book is distributed in the US by Trans Tech Publications.
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