The Gallium Nitride (GaN) Market: New Perspectives for Nitride Materials and Devices.LYON, France -- Reportlinker.com announces that a new market research report related to the worldwide electronics industry is now available to its catalogue. GaN07 Substrates and Devices: New perspectives for nitride materials and devices http://www.reportlinker.com/p053796/GaN07-substrates.html With an annual volume of more than 5 millions units of 2" equivalent substrates, GaN-based green, blue and white LED is the main eater of nitride materials targeting a $3.5B market at devices level. Current split shows that SiC substrates is accounting for 10% of the total production, sapphire making the balancing. Sapphire market for LED is now tending toward equilibrium with 2/3 LED manufactured on 2" and 1/3 on 3" substrates and a recent introduction of 4" production announced by Japanese Showa Denko Showa Denko K. K. (昭和電工株式会社 . Sapphire material market has then just beaten the $150M barrier in 2006. SiC is also entering in a 4" production stage at CREE but cannot be considered as a real open market. The substrate market playground can be seen as partially unstable because of the rapid emergence of new substrates for GaN epitaxy epitaxy Process of growing a crystal of a particular orientation on top of another crystal. If both crystals are of the same material, the process is known as homoepitaxy; if the materials are different, it is known as heteroepitaxy. . GaN-on-Silicon, GaN-on-ZnO, GaN-on-Germanium, GaN-on-Glass, GaN-on-AlN and composite substrates like GaN-on-diamond or Picogiga GaN-on-SopSiC are now pursuing the same Rubicon: propose the best compromise between GaN quality, large diameter, low bowing, high Tc, controlled TCE TCE trichloroethylene. TCE Environment A volatile chlorinated hydrocarbon that boils at 88ºC and is highly soluble–1000 ppm in water, with various industrial uses Toxicity Peripheral neuropathy, carcinogenic. and of course, low cost. 6" is the main target and is now available of-the-shelf from selected companies. That is opening new doors to higher LED productivity toward the gigantic SSL (Secure Sockets Layer) The leading security protocol on the Internet. Developed by Netscape, SSL is widely used to do two things: to validate the identity of a Web site and to create an encrypted connection for sending credit card and other personal data. general illumination business. In the RF business, GaN HEMT See FET. is now ready to challenge Si LDMOS LDMOS Laterally Diffused Metal Oxide Semiconductor LDMOS Lateral DMOS LDMOS Lightly-Doped Drain Metal-Oxide Semiconductor LDMOS Lateral Diffusion Mosfet and GaAs pHEMT in the telecommunication base stations market (3G, 4G, WiMAX...). With devices reaching Psat=174W @ 6GHz under 48V polarisation, the GaN technology can be partially implemented among the 2 millions deployed mobile phone base stations and coming next WiMAX infrastructures. A 10,000 x 4" epiwafers market is forecasted in a very near future. Gallium Nitride An alloy of gallium and nitrogen (GaN) that is used in semiconductor devices for lasers and LEDs, including blue lasers. Gallium nitride has the thermal and chemical stability required in laser applications. See gallium arsenide. (GaN), as silicon carbide (SiC), is a wide bandgap material allowing reaching high breakdown voltage. Thus road to power electronics applications is wide open. However, GaN growth is based on an ethero epitaxy process with often an AlN nucleation nu·cle·a·tion n. 1. The beginning of chemical or physical changes at discrete points in a system, such as the formation of crystals in a liquid. 2. The formation of cell nuclei. layer forcing the devices to be designed laterally. Lateral devices are limited in term of breakdown voltage compared to vertical ones and become rapidly bulky for high power density ranges. This situation deals with a subtle balance between substrate diameter, power density, chip size and device cost. In other terms, GaN power devices on sapphire, silicon or composite substrates can compete with SiC from a cost point of view using larger substrates (4") to compensate the bigger chip size at a given power density. Table of content Glossary Executive summary * Main targeted applications of GaN devices * 2005-2012 GaN devices revenues in M$ for LED, Laser, RF & power electronics * 2005-2012 GaN substrate revenues in M$ for LED, Laser, RF & power electronics GaN crystal growth techniques * MOCVD MOCVD Metallo Organic Chemical Vapor Deposition MOCVD Metal Oxide Chemical Vapor Deposition , MBE MBE (in Britain) Member of the Order of the British Empire MBE n abbr (BRIT) (= Member of the Order of the British Empire) → título ceremonial MBE n abbr (Brit) (= , HVPE HVPE Hydride Vapor Phase Epitaxy HVPE Halide Vapor Phase Epitaxy * Advantages & Drawbacks * Comparison table and main vendors GaN material current developments * Direct growth or buffer approach * Composite substrates: wafer bonding * Example of current realizations: Picogiga / Soitec Aonex BlueGlass IMEC AZZURO Toshiba Ceramic Nitronex TDI TDI - Transport Driver Interface Hitachi Cable Cermet Group4Lab SP3 Diamond * GaN / Silicon epiwafer manufacturers * GaN/Sapphire & GaN/SiC epiwafer manufacturers * Bulk / free-standing GaN wafers specifications * Examples of current GaN material pricing * GaN substrates / applications matrix * Tentative time-to-market for different substrates in different applications Optoelectronic Markets GaN HB-LED market * 2001-2012 GaN LED market in M$ * HB-LED 2006 applications breakdown * HB-LED 2006 market shares per company * Main agreements and cross-licenses * 2006 market breakdown by material * Typical structure * Emitting color in function of In concentration * Trends in High Power LEDs * Different White LED approaches * White LED performance roadmap * GaN HB-LEDs price analysis * New technologies in development * Material analysis 2005-2012 Estimated substrates volume (SiC & Sapphire) 2006 sapphire substrates: price, units and diameter analysis 2005-2012 Sapphire substrates market for LED in volume by diameter & related market 2005-2012 Sapphire substrates market for LED in value, split by diameter Sapphire substrates main manufacturers 2005-2012SiC wafers diameter evolution 2005-2012 SiC substrates market for LED Conclusions on HB-LED market Blue Laser Diodes * Introduction: Blue laser diodes status * Targeted applications for GaN LD * Blue laser diodes market in game stations * GaN-based laser diodes state-of-the-art * Known supply-chain in the blue LD business * 2005-2012 annual volumes for GaN LD for various applications and related device revenues * 2005-2012 annual volumes for 2" bulk GaN wafers for blue LD and related substrates revenues * Future GaN laser applications: laser TV and projectorsConclusion on Blue Laser Diodes market GaN RF devices market * Introduction: Market drivers of the GaN in RF applications * GaN RF applicative ap·pli·ca·tive adj. 1. Characterized by actual application; applied. 2. Practical; applicatory. ap markets * GaN / SiC / Si / GaAs RF transistors comparison * GaN vs Si FET FET: see transistor. (Field Effect Transistor) One of two major categories of transistor; the other is bipolar. FETs use a gate element that, when charged, creates an electromagnetic field that changes the conductivity of a silicon structure * GaN FET state-of-the-art * Example of current offers RFMD RFMD RF Micro Devices (NASDAQ) RFMD Rotary Fluid Management Device Eudyna CREE Nitronex OKI GaN FET commercialization plan * Food chain & players * Global PA market per applications Wireless phone infrastructures: BTS BTS - Bug Tracking System market * Recent announcements * BTS company market shares * PA: Si LDMOS & GaAs pHEMT 2006 status * Ranking of PA's manufacturers for base stations * Base stations installed base 2004-2010 by standards * Total accessible market for GaN FET in 3G BTS Defense market * Main advantages of GaN RF in defense applications * Example of US DARPA DARPA: see Defense Advanced Research Projects Agency. (Defense Advanced Research Projects Agency) The name given to the U.S. Advanced Research Projects Agency during the 1980s. It was later renamed back to ARPA. requests * n-going R&D programs in Europe for GaN Satellite market * GaN HEMT opportunities for Satcom V-SAT terminals market * GaN HEMT opportunities for V-SAT * V-SAT market data WiMAX market * WiMAX technology * WiMAX standards * WiMAX food chain * 2005-2010 worldwide annual volumes and related revenues for WiMAX BTS infrastructures GaN RF market synthesis * 2005-2010 forecasts for GaN RF devices market by applications * 2005-2010 annual needs for GaN 4" wafers in various RF applications * Conclusions GaN power electronics Generalities * Positioning of the GaN in the power electronics * Silicon vs. GaN device characteristics * Possible applications for GaN in power electronics * Power electronics market segmentation Market Segmentation A marketing term referring to the aggregating of prospective buyers into groups (segments) that have common needs and will respond similarly to a marketing action. * GaN-based power electronics applications roadmap * Estimated accessible markets, growth rate, and time to market for GaN based power electronics * Estimation of 4" GaN epiwafers volume consumption for power electronics * GaN vs. SiC SWOT analysis SWOT Analysis A tool that identifies the strengths, weaknesses, opportunities and threats of an organization. * Overview of initiatives in GaN-based power devices * Theoretical limit of GaN Schottky diode Vb Power Factor Correctors market * GaN Schottky diodes (SBD SBD - Smart Battery Data ) Main market characteristics * GaN SBD main advantages in PFC PFC abbr. private first class Noun 1. PFC - a powerful greenhouse gas emitted during the production of aluminum perfluorocarbon circuits * PFC efficiency comparison in function of junction T[deg] * SBD manufacturing cost comparison: SiC, GaN/Si and GaN/sapphire * 2006-2012 GaN Schottky diodes market forecasts in units and sales for PFC business * 2006-2012 GaN epiwafer shipment for PFC business * TOP 15 OEM (Original Equipment Manufacturer) The rebranding of equipment and selling it. The term initially referred to the company that made the products (the "original" manufacturer), but eventually became widely used to refer to the organization that buys the products and power supplies manufacturers Automotive applications: HEV HEV abbr. hepatitis E virus HEV hemagglutinating encephalomyelitis virus of pigs. * Why GaN in cars ? * Hybrid Electrical Vehicle (HEV) requirements. * HEV: Expected results of GaN introduction: * The TOP 5 key requirements for transistors in HEV * Added value analysis of GaN electronics for HEV * The HEV market * Sales projection for HEV to 2015 * Typical HEV power inverter (1) A logic gate that converts the input to the opposite state for output. If the input is true, the output is false, and vice versa. An inverter performs the Boolean logic NOT operation. (2) A circuit that converts DC current into AC current. Contrast with rectifier. module cost breakdown * Case study: Silicon vs. GaN HEV inverter cost breakdown * Sales volume projection for GaN diodes and transistors in automotive applications * Sales revenues projection for GaN diodes and transistors in automotive applications * Industry involvement: Possible GaN devices buyers * Conclusion: perspective for GaN devices in the HEV market UPS applications * Global UPS market * UPS : a concentrated market * UPS products segments * - UPS architectures examples * GaN success chances in UPS * GaN for UPS market GaN power electronics market synthesis * 2007-2015 Total Accessible Market (TAM) for GaN-based semiconductor devices in high power electronics * 2007-2015 Total Accessible Market (TAM) for GaN-based semiconductor devices in high power electronics General conclusions More market research reports? Go to http://www.reportlinker.com |
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