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TEL Releases Trias SPA Plasma Processing System Capable of Handling High-Speed Radical Oxidation Processes.


Business Editors & High-Tech Writers

TOKYO--(BUSINESS WIRE)--Dec. 2, 2002

Tokyo Electron Limited (TEL TEL Telephone
TEL Telegram
TEL Telugu (langauge)
TEL Terrorist Exclusion List
TEL Technology-Enhanced Learning
TEL Transporter-Erector-Launcher
TEL Tetra-Ethyl Lead
TEL Team Deutsche Telekom
; Head Office: Minato-ku, Tokyo; CEO (1) (Chief Executive Officer) The highest individual in command of an organization. Typically the president of the company, the CEO reports to the Chairman of the Board. , President: Tetsuro Higashi) announced that the company will commence sales of the Trias(TM) SPA, a plasma processing system capable of high-speed radical oxidation processing for 200mm and 300mm wafers.

Since gate electrodes for leading-edge logic circuits and DRAM devices, at 65nm processing or smaller, consist of metal, reducing heat treatment temperatures in the following processes is essential in semiconductor production. Also, as semiconductor devices become even smaller, the demand for low thermal budgets in heat treatment grows steadily. It has not been possible, however, to reduce heat treatment temperatures sufficiently, given the conventional process of forming thermally-oxidized films. Furthermore, with flash memory, the thermally grown tunnel oxide film reaches the limits of their reliability. There are high hopes for a radical oxidation process capable of forming high quality oxidized oxidized

having been modified by the process of oxidation.


oxidized cellulose
see absorbable cellulose.
 films at low temperatures to resolve these issues.

Based on the Radial Line Slot Antenna (RLSA RLSA Rugby League Supporters Association
RLSA Radial-Line Slot Antenna
RLSA Run Length Smoothing Algorithm
RLSA Rectangular Loop Slot Antenna
) microwave plasma developed for semiconductor processes by Professor Tadahiro Ohmi at Tohoku University, the Trias SPA uses the unique Slot Plane Antenna (SPA) plasma generating technology established by TEL, after long years of cultivating plasma technology. Using plasma that has both a high density and a low electron temperature, this technology enables the generation of high concentrations of oxygen radicals. The high concentrations of oxygen radicals can then be used in the formation of high-quality oxidized films at temperatures below 400 degrees C.

TEL commenced sales of the Trias SPA as a thin-film oxidizing/nitriding system for the formation of gate insulators for leading-edge logic circuits in December of 2001, receiving high praise from many users. The company has been introducing it for mass production assembly lines as well. By supporting high power in the antenna and a portion of the chamber in the high-speed radical oxidizing Trias SPA, the company has just succeeded in increasing radical density in the SPA chamber, enabling the oxidation of high-grade thick films, between 35 angstrom and 150 angstrom. The oxidized films formed by the high-speed radical oxidizing Trias SPA can achieve a higher degree of reliability than thermally-oxidized films. As a result, there is interest in using them for tunnel oxide in flash memory. In addition, the oxidation by high-speed radical oxidizing Trias SPA is not dependent on crystal orientation, making it possible to apply it aggressively to devices with regard to corner oxidation in Shallow Trench Isolation Shallow trench isolation (STI) is an integrated circuit feature which prevents electrical current leakage between adjacent semiconductor device components. STI is generally used on CMOS process technology nodes of 250 nanometers and smaller.  (STI STI systolic time intervals. ) as well. Furthermore, the technology enables excellent oxidation processes with minimal "gate bird's beak," while holding down WO3 sublimation sublimation, in chemistry
sublimation (sŭblĭmā`shən), change of a solid substance directly to a vapor without first passing through the liquid state.
 in the selective oxidation process for poly-metal gates by utilizing the properties of low-temperature treatment.

The Trias SPA is a single-wafer process system, and can contribute to shortening turnaround time (TAT) in LSI LSI: see integrated circuit.


(Large Scale Integration) Between 3,000 and 100,000 transistors on a chip. See SSI, MSI, VLSI and ULSI.
 chip production. Based on TEL's Trias 300mm single-wafer platform, the design of the Trias SPA is itself based on the 200mm/300mm bridge tool concept, so that it not only provides high levels of reliability and productivity, but also converts from 200mm to 300mm production without affecting process performance. The high-speed radical oxidizing SPA chamber can be field-upgraded from the conventional SPA chamber.

About TEL

TEL, established in 1963, is a leading supplier of innovative semiconductor and FPD (1) (Flat Panel Display) See LCD, plasma display, EL display, FED and flat panel display.

(2) (Field Programmable Device) An umbrella term for all chips that can be programmed by the customer including SPLDs, CPLDs and FPGAs. See PLD.
 production equipment worldwide. Product lines include coater/developers, thermal processing system, dry etchers, CVD CVD Cardiovascular disease, see there  systems, sputtering systems (PVD PVD
abbr.
peripheral vascular disease


PVD Peripheral vascular disease, see there
), wet cleaning systems, and test systems. In Japan, TEL distributes other leading edge semiconductor equipment tools, such as metrology tools or process control systems. In addition, TEL distributes high quality computer systems, semiconductor devices and electronic components of other leading suppliers, as well as computer network related products from around the world. To support this diverse product base, TEL has strategically located research & development, manufacturing, sales, and service locations all over the world. TEL is a publicly held company listed on the Tokyo Stock Exchange Tokyo Stock Exchange

Main stock market of Japan, located in Tokyo. It opened in 1878 to provide a market for the trading of government bonds newly issued to former samurai.
. http://www.tel.co.jp

NOTE TO EDITORS: In the fourth paragraph, in the phrase "WO3," the number "3" should be a subscript "3." It was changed for transmission purposes only.
COPYRIGHT 2002 Business Wire
No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2002, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

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Publication:Business Wire
Geographic Code:9JAPA
Date:Dec 2, 2002
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