Silicon carbide and related materials 2006; ECSCRM proceedings.9780878494422 Silicon carbide and related materials 2006; ECSCRM proceedings. European Conference on Silicon Carbide and Related Materials (2006: Newcastle upon Tyne Newcastle upon Tyne, city (1991 pop. 199,064) and metropolitan district, NE England, on the Tyne River. The city is an important shipping and trade center. The famous coal-shipping industry began in the 13th cent. , 2006) Ed. by N. Wright et al. Trans Tech Publications 2007 1061 pages $346.00 Hardcover Materials science forum; vs.556-557 TA401 Over the course of these two volumes, the editors (of the NASA NASA: see National Aeronautics and Space Administration. NASA in full National Aeronautics and Space Administration Independent U.S. Glenn Research Center The Glenn Research Center (more correctly, the NASA John H. Glenn Research Center at Lewis Field) is a NASA center, located in Cleveland, Ohio between Cleveland Hopkins International Airport and the Rocky River Reservation (part of the Cleveland Metroparks). , U. of South Florida, and U. of Pittsburgh) present 421 papers (35 being invited or plenary) from the September 2005 International Conference on Silicon Carbide and Related Materials, these materials being wide-bandgap semiconductors with properties that make them useful for the fabrication fabrication (fab´rikā´sh  n),n the construction or making of a restoration. of high-power and high-frequency electronic devices, as well as light-emitters and sensors. The first volume contains papers that were presented in technical sessions on silicon carbide (SiC) bulk growth; SiC homoepitaxial, heteropolytic, and heteroepitaxial growth; physical properties and characterization issues including stacking faults, point defects, impurities, surfaces and interfaces, fundamental properties, and wafer mapping; and porous SiC and SiC nanoparticlses and nanowires. The second volume contains the papers from the technical sessions on implantation and doping doping, in electronics: see semiconductor. Altering the electrical conductivity of a semiconductor material, such as silicon, by chemically combining it with foreign elements. of SiC, contacts, oxides, chemical-mechanical polishing of SiC, micromachining, and other processing topics; unipolar unipolar /uni·po·lar/ (u?ni-po´ler) 1. having a single pole or process, as a nerve cell. 2. pertaining to mood disorders in which only depressive episodes occur. devices, bipolar devices, and sensors and detectors; III-nitrides (covering growth of III-nitrides, physical properties and characterization, surfaces and interfaces, and devices); and related materials. ([c]20082005 Book News, Inc., Portland, OR) |
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