SanDisk to Launch 56-Nanometer, 16-Gigabit High-Performance NAND Flash Memory with Toshiba.Introduction of 56nm 8-Gigabit (Gb) Multi-Level-Cell (MLC (MultiLevel Cell) A flash memory technology that stores more than one bit per cell. Traditional flash memory defines a 0 or 1 bit based on a single voltage threshold. ) NAND Flash See flash memory. Chips Begins This Quarter, with 56nm 16-Gb MLC Planned for Q207 56nm Transition Enables Continued Cost-effective MLC Flash Memory MILPITAS, Calif. -- Please replace the release with the following corrected version due to multiple revisions. The corrected release reads: SANDISK TO LAUNCH 56-NANOMETER, 16-GIGABIT HIGH-PERFORMANCE NAND FLASH MEMORY WITH TOSHIBA Introduction of 56nm 8-Gigabit (Gb) Multi-Level-Cell (MLC) NAND Flash Chips Begins This Quarter, with 56nm 16-Gb MLC Planned for Q207 56nm Transition Enables Continued Cost-effective MLC Flash Memory SanDisk Corporation[R] (NASDAQ NASDAQ in full National Association of Securities Dealers Automated Quotations U.S. market for over-the-counter securities. Established in 1971 by the National Association of Securities Dealers (NASD), NASDAQ is an automated quotation system that reports on :SNDK) today announced that it expects to see the launch of the next generation of NAND flash memory this quarter as it begins the transition from 70 nanometer (nm) to 56nm multi-level cell MLC NAND flash is a flash memory technology using multiple levels per cell to allow more bits to be stored as opposed to SLC NAND flash technologies, which use a single level per cell. (MLC) flash memory chips at Fab 3, the 300mm wafer fabrication Wafer Fabrication is a procedure composed of many repeated sequential processes to produce complete electrical or photonic circuits. Examples include production of radio frequency (RF) amplifiers, LEDs, optical computer components, and CPUs for computers. facility that is located at Toshiba's Yokkaichi Operations near Nagoya, Japan. In the first half of this year, SanDisk intends to start shipping products with the industry's highest available density of single-chip MLC NAND flash memory. After qualifying limited engineering samples, SanDisk plans to introduce 8Gb (1 gigabyte) single-chip MLC NAND flash memory on 56nm process technology in the first quarter. In Q2-07, the company expects to introduce 56nm 16Gb (2 Gigabyte) NAND (Not AND) A Boolean logic operation that is true if any single input is false. Two-input NAND gates are often used as the sole logic element on gate array chips, because all Boolean operations can be created from NAND gates. See flash memory. , which doubles the memory density per chip when compared to 70nm technology. Architectural innovations and improved programming efficiency in 56nm technology are expected to enhance product performance. The adoption of 56nm process technology allows SanDisk to continue its leadership in providing cost-effective flash memory-based products. "With commencement of the 56nm technology, SanDisk is rolling out its fifth generation of MLC NAND flash memory," said Dr. Randhir Thakur, SanDisk's executive vice president of technology and worldwide operations. "The technology and design advances will help enable SanDisk products to offer approximately twice the improvement in write performance compared to the 70nm generation. We are pleased with the joint development of 56nm advanced technology with Toshiba, and expect it to become a production workhorse work·horse n. 1. Something, such as a machine, that performs dependably under heavy or prolonged use: "the 50-year-old DC-3 ... in Fab 3 during the second half of this year. We are executing according to according to prep. 1. As stated or indicated by; on the authority of: according to historians. 2. In keeping with: according to instructions. 3. plan and continue to make the captive Fabs highly cost-effective sources of flash memory for our expanding array of consumer products," he added. SanDisk and Toshiba share output from the Yokkaichi facility and have co-developed many of the designs and technologies in MLC NAND flash. The new 56nm flash will be produced initially at Fab 3, the first 300mm wafer facility that SanDisk and Toshiba opened in 2005. By the end of this year, Fab 4, the new 300mm facility now under construction in connection with Flash Alliance, Ltd., a venture between the two companies, is expected to add to the 56nm flash production. SanDisk is the original inventor of flash storage cards and is the world's largest supplier of flash data storage card products, using its patented, high-density flash memory and controller technology. SanDisk is headquartered in Milpitas, California Milpitas (IPA pronunciation: mɪlpitʌs; inhabitants are called 'Milpitans') is a city in Santa Clara County, California. It is located with San Jose to its south and Fremont to its north, at the eastern end of Highway 237 and generally between Interstate freeways 680 and , and has operations worldwide, with more than half its sales outside the U.S. SanDisk's product and executive images can be downloaded from http://www.sandisk.com/corporate/media.asp SanDisk's web site/home page address: http://www.sandisk.com SanDisk and the SanDisk logo are trademarks of SanDisk Corporation, registered in the United States United States, officially United States of America, republic (2005 est. pop. 295,734,000), 3,539,227 sq mi (9,166,598 sq km), North America. The United States is the world's third largest country in population and the fourth largest country in area. and other countries. Other brand names mentioned herein are for identification purposes only and may be the trademarks of their respective holder(s). This press release contains certain forward-looking statements, including statements about our business outlook, technological advancements, product performance, production schedules, shipments and cost reductions that are based on our current expectations and involve numerous risks and uncertainties that may cause these forward-looking statements to be inaccurate and may significantly and adversely affect our business, financial condition and results of operations. Risks that may cause these forward-looking statements to be inaccurate include among others: unexpected delays in the production of 56-nanometer NAND flash products at Fab 3, unexpected delays in completion of Fab 4 or in the ramp-up of 56-nanometer NAND flash production at Fab 4, once completed, inability to meet higher performance specifications, higher than expected costs and the other risks detailed from time-to-time under the caption "Risk Factors" and elsewhere in our Securities and Exchange Commission filings and reports, including, but not limited to, Form 10-K Form 10-K A report required by the SEC from exchange-listed companies that provides for annual disclosure of certain financial information. Form 10-K See 10-K. and our quarterly reports on Form 10-Q Form 10-Q See 10-Q. . We do not intend to update the information contained in this press release. |
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