Samsung Breaks the 50ns Speed Barrier with the Industry's Fastest 4-Meg EDO DRAM; High Speed 256K x 16 bit Memory Family Available in High Volume.SAN JOSE, Calif.--(BUSINESS WIRE)--Oct. 14, 1996--Samsung Semiconductor today announced the introduction of the KM416C254D CMOS (Complementary Metal Oxide Semiconductor) Pronounced "c-moss." The most widely used integrated circuit design. It is found in almost every electronic product from handheld devices to mainframes. Dynamic Random Access Memory Dynamic random access memory (DRAM) is a type of random access memory that stores each bit of data in a separate capacitor within an integrated circuit. Since real capacitors leak charge, the information eventually fades unless the capacitor charge is refreshed periodically. (DRAM) chip. Fabricated using Samsung's advanced CMOS process, the new 4-meg DRAM family features access times of 35ns, 40ns and 45ns. The KM416C254D is aimed at hard drives, graphics boards and printer applications where speed is the all-important factor. The KM416C254D, organized as 256K x 16 bits, has been designed using a new Samsung technology which allows these devices to break the 50 nanosecond access time 'barrier' and provide tRAC speeds as fast as 35ns, with a concurrent tCAC of 12ns using Extended Data Out (EDO Edo: see Tokyo, Japan. ). The new device is available in a standard as well as a low power version. "Our customers asked for high speed 4-meg EDO DRAM in volume, and we responded," said Tony Grant, Samsung's Associate Director of Memory Marketing. "This new memory family offers extremely high speed in a density well suited to many speed-critical applications. The 35ns speed version is currently the fastest 256K x 16 EDO DRAM on the market." Its small size makes it possible to use this device in areas where space is tight, as well as in higher density, industry standards SIMMs and DIMMs. Features -- Extended Data Out (EDO) operation for 35, 40 and 45 ns access times -- 2 /CAS byte-per-word Read/Write operation -- /CAS before /RAS refresh capability -- Self Refresh capability (low power version only) -- TTL (1) (Time To Live) A parameter in a network packet that sets a time limit to its validity. In order to prevent an IP packet from propagating endlessly through the network, the value in the TTL field is reduced by each router. compatible inputs and outputs -- Early write/output enable write option -- JEDEC The division of the Electronic Industries Alliance (EIA) that deals with semiconductor standards (officially, the JEDEC Solid State Technology Association of EIA). JEDEC was formed in 1958 when the Joint Electron Tube Engineering Council (JETEC) split into two Joint Electron Device standard pinouts -- Triple +5 volt +/- 10% power supply Pricing and availability The KM416C254D is available now in volume and is supplied in both 40-lead SOJ (Small Outline package J-lead) A small-dimension, plastic, rectangular surface mount chip package with j-shaped pins on its two long sides. See J-lead, SOP and chip package. SOJ - Small Outline J and TSOP-II packages for under $4.50 each in volume quantity. Samsung Semiconductor Samsung Semiconductor is a wholly owned subsidiary Wholly Owned Subsidiary A subsidiary whose parent company owns 100% of its common stock. Notes: In other words, the parent company owns the company outright and there are no minority owners. of Samsung Electronics, a $21 billion dollar division of the $84 billion, Korean-based, Samsung Group. Samsung's Semiconductor Division is the sixth largest semiconductor manufacturer and the leading producer of memory products in the world. Samsung Semiconductor's North American headquarters are located in San Jose, California San Jose (IPA: /ˌsænhoʊˈzeɪ/) is the third-largest city in California, and the tenth-largest in the United States. It is the county seat of Santa Clara County. . Samsung was the first company to sample a family of 16-Megabit DRAMs in 1990, and the first to introduce the 64-Megabit DRAM. Samsung delivered the first fully synchronous DRAM in 1993, and the first fully functional 256-Megabit DRAM in 1994. CONTACT: Samsung Semiconductor Vera Haire, 408/954-7228 or Cain Communications Susan Cain, 408/291-2580 |
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