Samsung Announces First 40-nanometer Device -- 32Gb NAND Flash With Revolutionary Charge Trap Technology.SEOUL, South Korea -- Samsung Electronics Samsung Electronics (SEC, Hangul:삼성전자; KSE: 005930, KSE: 005935, LSE: SMSN, LSE: SMSD) is a South Korean multinational corporation and the world's largest and leading electronics and information technology company. Co., Ltd., the world leader in advanced semiconductor technology solutions, today announced that it has developed the industry's first 40-nanometer (nm) memory device. The new 32 Gigabit (Gb) NAND flash See flash memory. device is the first memory to incorporate a Charge Trap Flash Charge Trap Flash (Often abbreviated to CTF) is a new technology to fabricate a NAND flash device invented by Samsung Electronics in 2006. The technology depends on a SONOS (semiconductor-oxide-nitride-oxide-semiconductor) or MONOS (metal-ONOS) capacitor structure, storing the (CTF CTF Capture The Flag CTF Child Trust Fund (UK) CTF Canadian Tax Foundation CTF Canadian Taxpayers Federation (lobby group) CTF Canadian Television Fund CTF Canadian Teachers' Federation ) architecture, a revolutionary new approach to further increase manufacturing efficiency while greatly improving performance. The new CTF-based NAND flash memory increases the reliability of the memory by sharply reducing inter-cell noise levels. Its surprisingly simple structure also enables higher scalability, which will eventually improve manufacturing process technology from 40 nm to 30 and even 20nm. In each 32Gb device, the control gate in the CTF is only 20 percent as large as a conventional control gate in a typical floating gate structure. With CTF, there is no floating gate. Instead, the data is temporarily placed in a "holding chamber" of the non-conductive layer of the flash memory composed of silicon nitride (Si3N4) A silicon compound capable of holding a static electric charge and used as a gate element on some MOS transistors. (SiN). This results in a higher level of reliability and better control of the storage current. The 32Gb NAND flash memory can be used in memory cards with densities of up to 64-Gigabytes (GBs). One 64GB card can store over 64 hours of DVD DVD: see digital versatile disc. DVD in full digital video disc or digital versatile disc Type of optical disc. The DVD represents the second generation of compact-disc (CD) technology. resolution movies (40 movies) or 16,000 MP3 music files (1,340 hours). The CTF design is enabled through the use of a TANOS structure comprised of tantalum tantalum (tăn`tələm) [from Tantalus], metallic chemical element; symbol Ta; at. no. 73; at. wt. 180.9479; m.p. 2,996°C;; b.p. 5,400±100°C;; sp. gr. 16.65 at 20°C;; valence +2, +3, +4, or +5. (metal), aluminum oxide aluminum oxide: see alumina. (high k material), nitride, oxide and silicon. The use of a TANOS structure marks the first application of a metal layer coupled with a high k material to the NAND (Not AND) A Boolean logic operation that is true if any single input is false. Two-input NAND gates are often used as the sole logic element on gate array chips, because all Boolean operations can be created from NAND gates. See flash memory. device. The TANOS CTF architecture, which serves as the foundation of the 40nm 32Gb CTF NAND flash announced today, was developed after extensive research of the Samsung Semiconductor R&D department. Samsung first revealed the TANOS structure through a paper at the 2003 International Electron Devices Meeting The International Electron Devices Meeting is an annual conference held alternatively in San Francisco, California and Washington D.C. Established in 1954, IEDM is the world's main forum on advancement in semiconductor and electronic devices. (IEDM IEDM International Electron Devices Meeting IEDM Institute Économique de Montréal ). The new 32Gb CTF memory was announced at the sixth annual Samsung press conference in Seoul. Introduction of a 40nm manufacturing process for 32Gb NAND flash marks the seventh generation of NAND flash that follows the New Memory Growth Theory of double-density growth every 12 months, which was first presented by Dr. Chang Gyu Hwang, president and CEO (1) (Chief Executive Officer) The highest individual in command of an organization. Typically the president of the company, the CEO reports to the Chairman of the Board. of Samsung Electronics' Semiconductor Business in a keynote address keynote address n. An opening address, as at a political convention, that outlines the issues to be considered. Also called keynote speech. Noun 1. at ISSCC ISSCC International Solid State Circuits Conference ISSCC International Student Services Center Corporation Limited 2002. About Samsung Electronics Samsung Electronics Co., Ltd. is a global leader in semiconductor, telecommunication, digital media and digital convergence technologies with 2005 parent company sales of US$56.7 billion and net income of US$7.5 billion. Employing approximately 128,000 people in over 120 offices in 57 countries, the company consists of five main business units: Digital Appliance Business, Digital Media Business, LCD Business, Semiconductor Business and Telecommunication Network Business. Recognized as one of the fastest growing global brands, Samsung Electronics is a leading producer of digital TVs, memory chips, mobile phones, and TFT-LCDs. For more information, please visit www.samsung.com
Reference Material
-- Technology Features (CTF Vs. Floating Gate)
----------------------------------------------------------------------
Charge Trap Flash Floating Gate
----------------------------------------------------------------------
Development 2006 (Samsung) 1989 (Toshiba)
----------------------------------------------------------------------
Structure Single Gate Dual Gate
(Control Gate) (Control/ Floating
Gate)
----------------------------------------------------------------------
Fabrication Simple Complex
(Cell height) (one fifth of the
floating gate)
----------------------------------------------------------------------
Control gate Height One fifth of the
floating gate -
------------------------------------------------------
Material Metal (TaN) Poly Silicon
----------------------------------------------------------------------
Storage level Height One tenth of a
floating gate -
------------------------------------------------------
Material Non-conduct (SiN) Conduct (poly-Si)
----------------------------------------------------------------------
Inter-Cell Noise Level No interference Interference at
floating gate
----------------------------------------------------------------------
Scalability Greater than 20nm-level, Greater than 50nm-
up to 256Gb level, up to 16Gb
----------------------------------------------------------------------
Process Steps Reduces process step
by 20 percent -
----------------------------------------------------------------------
Cell Size Reduces cell size
by 28 percent -
----------------------------------------------------------------------
|
|
||||||||||||||||
Printer friendly
Cite/link
Email
Feedback
Reader Opinion