Samsung Announces Breakthrough: 4Gigabit NAND, Advanced Nanometer Process Technologies, and New Concept Fusion Memory Solution.Business Editors/High-Tech Writers SEOUL, South Korea--(BUSINESS WIRE)--Sept. 29, 2003 Leveraging Design and Manufacturing Leadership, Samsung Demonstrates New Memory Development Curve of Two-Fold Density Growth Every 12 Months Samsung Electronics Samsung Electronics (SEC, Hangul:삼성전자; KSE: 005930, KSE: 005935, LSE: SMSN, LSE: SMSD) is a South Korean multinational corporation and the world's largest and leading electronics and information technology company. Co., Ltd., the world leader in advanced semiconductor memory technology, today announced development of an array of next generation memory technologies designed to meet the requirements of the fast changing digital environment. Leveraging its industry leadership in design and manufacturing, Samsung announced the world's first 70 nanometer (nm) 4Gigabit (Gb) NAND Flash See flash memory. memory and an 80nm DRAM device. In addition, the company announced a single chip memory solution, called fusion memory, which takes the multi-chip package and system-in-package concepts one step further to deliver a single design combining memory and logic. "Samsung's bullish strategy of investing heavily in next generation design and manufacturing technologies has enabled the company to offer a unique portfolio of advanced memory devices designed to meet the challenges of convergence and mobility in tomorrows digital marketplace," said Dr. Chang Gyu Hwang, president of Samsung's memory division. "Stand-alone memory components are facing tough new demands from digital convergence In the days of the first computers, transaction and company data were the first types of information digitized. Then came text, opening the world to word processing, followed by audio CDs and finally video. in mobile and digital consumer markets and Samsung's advanced memory solutions will play a key role in enabling new generations of digital products." 4Gb NAND Flash Memory In 70nm Process Technology Samsung's world first 4Gb NAND flash is the fourth generation of NAND flash memory, following a growth curve that doubles its density every twelve months: 256Mb in 1999, 512Mb in 2000, 1Gb in 2001, 2Gb in 2002, and 4Gb in 2003. Development of the 4Gb NAND flash design demonstrates NAND's high growth potential once again. At the new higher density levels, nonvolatile memory See non-volatile memory. is now a viable choice for solid-state data storage, replacing magnetic tapes and low-density hard disk drives. NAND flash will also target mobile applications, such as notebook PCs, tablet PCs (1) A tablet computer environment from Microsoft that is based on an enhanced version of Windows XP. Designed to function more like a portable writing tablet than previous tablet-based computers, it includes handwriting recognition as well as the ability to retain handwritten words , mobile handsets, MP3 players and PDAs, that have space, weight and power constraints. Samsung's 4Gb NAND flash memory incorporates a 70nm node design to achieve the industry's smallest memory cell size of 0.025um(2). The 4Gb NAND flash is the industry's first to feature a 300-angstrom tungsten tungsten (tŭng`stən) [Swed.,=heavy stone], metallic chemical element; symbol W; at. no. 74; at. wt. 183.85; m.p. about 3,410°C;; b.p. 5,660°C;; sp. gr. 19.3 at 20°C;; valence +2, +3, +4, +5, or +6. gate, which reduces inter-cell resistance and noise level to ensure higher performance in multi-gigabit memory designs. Samsung expects the new tungsten gate to be adaptable in up to 50nm designs. The 70nm node also opens the door to higher economies of scale. A simple comparison of 70nm over the previous 90nm will instantly boost production by 50 percent. The global market for NAND flash memory is expected to jump from $3 billion in 2003 to $16 billion by 2007, showing a more than five-fold volume increase in just four years. Samsung expects to maintain its lead in the NAND flash market with a 65 percent market share. The company is targeting 70 percent annual growth in NAND Flash sales from $400 million in 2001, $1.1 billion in 2002 and onwards. DRAM in 80nm Process Technology In DRAM technology, Samsung announced an 80nm 512Mb monolithic device. The new device has adopted Recess Channel Array Transistor (RCAT RCAT Resource Centre for Academic Technology RCAT Recess Channel Array Transistor RCAT Radio-Controlled Aerial Target RCAT Root Cause Analysis Team RCAT Ridgetown College of Agriculture Technology (Canada) ) technology to enhance data refresh features. The introduction of the 80nm node for DRAM ushers in a three-dimensional design technology, covering less area than the linear cell structure. The RCAT technology minimizes cell size by building a three-dimensional transistor to pair each capacitor in the DRAM circuitry, significantly enhancing density. The new DRAM utilizes low resistance tungsten gates for higher performance and low temperature, and a high-k oxide process for low voltage Low voltage is an electrical engineering term that broadly identifies safety considerations of an electricity supply system based on the voltage used. While different definitions exist for the exact voltage range covered by "low voltage", the most commonly used ones include "mains requirements that go beyond 1.5V, a standard feature of DDR (Double Data Rate) Refers to an SDRAM memory chip that increases performance by doubling the effective data rate of the frontside bus. For more details, see SDRAM. DDR - Double Data Rate Random Access Memory 3 DRAM. Mass production of the cutting edge technology will begin with 1Gb to 512Mb densities at 3Gigabit per second and faster speeds. Fusion Memory In addition to the new 4Gb NAND flash and 80nm DRAM devices, Samsung also announced a new concept in memory design called Fusion Memory. Fusion memory is an integrated, single-chip that combines high density memory and logic, together with software availability. The first Fusion memory device is a 512Mb NAND flash memory with logic interface built on a single piece of silicon, called OneNAND(TM). Availability of the OneNAND(TM) will reduce system manufacturer's cost and time-to-market as they will no longer need to optimize the system environment around the NAND flash. Samsung expects that the new Fusion technology will drive acceptance of NAND (Not AND) A Boolean logic operation that is true if any single input is false. Two-input NAND gates are often used as the sole logic element on gate array chips, because all Boolean operations can be created from NAND gates. See flash memory. only system designs to replace NOR Flash+Memory combinations in applications with high data processing data processing or information processing, operations (e.g., handling, merging, sorting, and computing) performed upon data in accordance with strictly defined procedures, such as recording and summarizing the financial transactions of a throughput requirements. About Samsung Electronics Samsung Electronics Co., Ltd. is a global leader in semiconductor, telecommunication, and digital convergence technology. Samsung Electronics employs approximately 75,000 people in 89 offices in 47 countries and business performance for 2002 record 49.6 billion US$ in sales and 5.9 billion US$ in net income. Samsung Electronics is the world's leading company of advanced semiconductors, TFT-LCDs, CDMA (Code Division Multiple Access) A method for transmitting simultaneous signals over a shared portion of the spectrum. The foremost application of CDMA is the digital cellular phone technology from QUALCOMM that operates in the 800 MHz band and 1.9 GHz PCS band. mobile phones, monitors and VCRs. Samsung Electronics consists of four main business units: Device Solution Network, Digital Media Network, Telecommunication Network and Digital Appliance Any apparatus controlled by a computer. It may refer to an actual household appliance (coffee maker, toaster, etc.) that is computerized, but often refers to a handheld device such as a pager, cellphone or PDA. See Internet appliance. Network Businesses. The Device Solution Network specializes in semiconductors, TFT LCD (Thin Film Transistor LCD) See LCD. displays and data storage medium for industrial, mobile and advanced computing applications, offering a full line of key solutions of DRAMs, SRAMs, Display Driver ICs, Smart Card ICs, TFT LCD panels and Flash memories. The Device Solution Network operates 11 overseas sales subsidiaries and mass production facilities to maximize on hand customer support. For more information, visit our website at http://www.samsungsemi.com. Samsung Semiconductor Inc., a wholly owned U.S. subsidiary of Samsung Electronics Co., Ltd., is located in San Jose San Jose, city, United States San Jose (sănəzā`, săn hōzā`), city (1990 pop. 782,248), seat of Santa Clara co., W central Calif.; founded 1777, inc. 1850. , Calif. More information can be found at http://www.usa.samsungsemi.com. Samsung Semiconductor Europe, a wholly owned subsidiary Wholly Owned Subsidiary A subsidiary whose parent company owns 100% of its common stock. Notes: In other words, the parent company owns the company outright and there are no minority owners. of Samsung Electronics Co., Ltd., is headquartered in Frankfurt, Germany and London, UK with sales offices all over Europe. More information can be found at http://www.samsungsemi.de. |
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