STMicroelectronics Announces Double Success for Research Expert.

Business Editors

GENEVA--(BUSINESS WIRE)--November 29, 2001

Best IEEE Paper award to be presented to ST research expert at

International Electron Devices Meeting in Washington D.C.

ST also to present paper unveiling the world's smallest

manufactured NMOSFET operating at room temperature within the

conventional CMOS process

STMicroelectronics (NYSE: STM) today announced that Advanced CMOS development teams headed by Thomas Skotnicki at its Central Research & Development facility in Crolles, France, have received two of the most prestigious awards granted by the semiconductor and solid-state physics community: the Paul Rappaport Award for the best IEEE paper in 2000 and also the Best Paper award for the ESSDERC 2000 conference, held in Cork, Ireland, in September 2000.

The IEEE award was won for the paper entitled "Silicon-on-Nothing (SON) - an Innovative Process for Advanced CMOS", which described a new CMOS device architecture developed by a joint team, based in Grenoble, France, from ST and France Telecom. The SON process allows extremely thin (a few nanometers) buried dielectrics and silicon films to be fabricated with high accuracy within the methodologies of conventional epitaxial technology. This characteristic positions it as a leading candidate for future system-on-chip (SoC) technology where ever-increasing levels of system integration must be achieved with processes that are compatible with spiraling high-volume/low-cost manufacturing constraints.

The IEEE's Paul Rappaport award will be presented at the International Electron Devices Meeting (IEDM), which is being held on December 3-5, 2001 in Washington D.C., where ST will also present a paper(a) that unveils the world's smallest manufactured NMOSFET operating at room temperature within the conventional CMOS process. ST will describe a poly-Silicon/Germanium notch technique, which enables it to achieve a 16nm gate using conventional lithography. These transistors are five times smaller than state-of-the-art transistors being manufactured today. This achievement represents the smallest gate length ever reported for conventional bulk CMOS transistors and promises a long and healthy future for Moore's Law.

The ESSDERC award was for the paper entitled "Dielectric Pockets - a New Concept of the Junctions for Deca-nanometric CMOS Devices", which reported another ground-breaking advance in deep-submicron CMOS technology achieved by a joint ST/France Telecom research team. This paper described a major advance in semiconductor technology which overcomes many of the shortcomings of previously described strategies for tackling the SCE (Short Channel Effects) problems that chip manufacturers face in trying to develop processes that can shrink the dimensions of transistors.

"One of the key factors in ST's success story has been our ability not only to be at the real leading edge of process technology and manufacturing science, but also to develop breakthrough solutions to overcome the roadblocks of the ITRS roadmap. It is people like Thomas Skotnicki, who combine a complete mastery of theoretical and practical issues, who brought us to this position and will keep us there," said Joel Monnier, Corporate Vice-President, Central R&D, STMicroelectronics.

Dr. Skotnicki, a Senior Member of the IEEE and Fellow Editor of the IEEE Transactions on Electron Devices, is one of the world's leading experts in MOS technology, in which he has worked for over 20 years. A graduate of the Warsaw University of Technology, Poland, he joined France Telecom R&D (CNET) in 1986, where he first worked on CMOS devices and modeling. In 1999, he joined the STMicroelectronics Central Research and Development team at Crolles, France, where he now manages the Advanced Devices Program. He holds more than 30 patents and has authored over 100 papers in the field of electronics.

(a) Paper #29.5, "16nm Planar NMOSFET Manufacturable Within

State-of-the-Art CMOS Process Thanks to Specific Design and

Optimization," F. Boeuf et al, ST Microelectronics.

About STMicroelectronics

STMicroelectronics is the world's third largest independent semiconductor company. The Company shares are traded on the New York Stock Exchange, on Euronext Paris and on the Milan Stock Exchange. The Company designs, develops, manufactures and markets a broad range of semiconductor integrated circuits (ICs) and discrete devices used in a wide variety of microelectronic applications, including telecommunications systems, computer systems, consumer products, automotive products and industrial automation and control systems. In 2000, the Company's net revenues were $7,813.2 million and net earnings were $1,452.1 million. Further information on ST can be found at www.st.com.