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STMICROELECTRONICS PROCESSES ONE MILLION WAFERS USING FSI INTERNATIONAL'S OZONE STRIP TECHNOLOGY.


FSI FSI Foreign Service Institute
FSI Fluid Structure Interaction
FSI Fuel Stratified Injection
FSI Federazione Scacchistica Italiana (Italian Chess Federation)
FSI Free Standing Insert
FSI Flight Simulator
 International has become a significant contributor to STMicroelectronics' drive to makesustainable, environmentally conscious semiconductor manufacturing development part of its corporate mission. Since adopting DIO DIO Diode
DIO Digital Input/Output
DIO Defence Intelligence Organisation (Australia)
DIO Designated Institutional Official
DIO Days Inventory Outstanding
DIO Data Input-Output
DIO Defence Industries Organisation
3-(ozonated water) based resist strip processing for front-end-of-line (FEOL FEOL Front End Of Line (semiconductor manufacturing) ) production in February, ST has processed one million wafers using the FSI technology in its AG1ST,Agrate, Italy, facility.

Four of FSI's spray processing systems installed at ST are equipped with DIO3 Generation Modules. This technology has allowed ST to convert from its use of conventional piranha-based chemistry to the more benign DIO3 chemistry in almost all FEOL resist stripping and post-ash residue removal steps, nearly eliminating the use of sulfuric acid sulfuric acid, chemical compound, H2SO4, colorless, odorless, extremely corrosive, oily liquid. It is sometimes called oil of vitriol. Concentrated Sulfuric Acid
 (H2SO4) and significantly reducing the use of hydrogen peroxide hydrogen peroxide, chemical compound, H2O2, a colorless, syrupy liquid that is a strong oxidizing agent and, in water solution, a weak acid. It is miscible with cold water and is soluble in alcohol and ether.  (H2O2).

FSI's DIO3 Generation Module is custom designed to supply MERCURY(R) or ZETA(R) Surface Conditioning Systems with ozonated water (DIO3) for wafer cleaning and photoresist stripping/cleaning applications.

STMicroelectronics is a global independent semiconductor company that designs, develops, manufactures and markets a broad range of semiconductor integrated circuits Integrated circuits

Miniature electronic circuits produced within and upon a single semiconductor crystal, usually silicon. Integrated circuits range in complexity from simple logic circuits and amplifiers, about 1/20 in. (1.
 (ICs) and discrete devices used in a wide variety of microelectronic applications, including telecommunications systems, computer systems, consumer products, automotive products and industrial automation and control systems.

Metron Technology (MTCH) is a leading global provider of outsourced marketing, sales, service and support solutions to semiconductor materials Semiconductor materials are insulators at absolute zero temperature that conduct electricity in a limited way at room temperature (see also Semiconductor). The defining property of a semiconductor material is that it can be doped with impurities that alter its electronic properties  and equipment suppliers and semiconductor manufacturers. Metron has the ability to provide product service and support in major semiconductor manufacturing markets in the world.

FSI International, Inc. is a leading global supplier of processing equipment used at key production steps to manufacture microelectronics. The company develops, manufactures, markets and supports products used in the technology areas of microlithography, surface conditioning and low-k spin-on dielectrics. FSI International's customers include microelectronics manufacturers located throughout North America, Europe, Japan and the Asia-Pacific region.
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No portion of this article can be reproduced without the express written permission from the copyright holder.
Copyright 2000, Gale Group. All rights reserved. Gale Group is a Thomson Corporation Company.

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Title Annotation:Company Business and Marketing
Comment:STMICROELECTRONICS PROCESSES ONE MILLION WAFERS USING FSI INTERNATIONAL'S OZONE STRIP TECHNOLOGY.(Company Business and Marketing)
Publication:EDP Weekly's IT Monitor
Geographic Code:1USA
Date:Oct 9, 2000
Words:291
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